IXGB25N60R2 Search Results

Contextual Info: Dual Independent IGBTs and Diodes in Power SIP IXGB25N60R2 VCES =600V iC25 = 25 A vCE sat = 2.5 v Power SIP Advanced data (11.94) Maximum Ratings Symbol Test Conditions v’ v CGR Tj = 25°C to 150°C 600 V Td = 25°C to 150°C; RGE= 1 Mi2 600 V v GES Continuous

Contextual Info: IXGB25N60R2 vCES = 600V iC25 = 25 A vCE sat =2.5V Dual Independent IGBTs and Diodes in Power SIP Power SIP Advanced data (11.94) 1 Symbol Test Conditions 2 3 4 5 6 7 8 9 1 0 11 12 Maximum Ratings VCES Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE = 1

30n50 mosfet

Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
Contextual Info: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600