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    IXFT86N30T Search Results

    IXFT86N30T Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFT86N30T
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 86A TO268 Original PDF 6
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    IXYS Corporation IXFT86N30T

    MOSFET N-CH 300V 86A TO268
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    Discmsft Nchtrenchgate-Gen1 To-268Aa/ Tube |Littelfuse IXFT86N30T
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    IXFT86N30T Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXFH86N30T

    Contextual Info: IXFH86N30T IXFT86N30T TrenchTM HiperFETTM Power MOSFET VDSS ID25 = 300V = 86A  46m  RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V


    Original     		IXFH86N30T IXFT86N30T O-247 86N30T W-N32) IXFH86N30T PDF

    123B16

    Contextual Info: Advance Technical Information IXFH86N30T IXFT86N30T TrenchTM HiperFETTM Power MOSFET VDSS ID25 = 300V = 86A ≤ 43mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFH86N30T IXFT86N30T O-247 86N30T 123B16 PDF

    Contextual Info: Advance Technical Information TrenchTM HiperFETTM Power MOSFET VDSS ID25 IXFH86N30T IXFT86N30T = 300V = 86A ≤ 43mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFH86N30T IXFT86N30T O-247 86N30T PDF