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    IXFR14N100Q2 Search Results

    IXFR14N100Q2 Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFR14N100Q2
    IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF 580.42KB 4
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    IXYS Corporation IXFR14N100Q2

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    IXFR14N100Q2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ISOPLUS247

    Abstract: IXFR14N100Q2
    Contextual Info: Preliminary Technical Information HiPerFETTM Power MOSFET Q2-Class IXFR14N100Q2 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings


    Original
    IXFR14N100Q2 300ns ISOPLUS247 E153432 40N50Q2 05-28-08-C ISOPLUS247 IXFR14N100Q2 PDF

    ISOPLUS247

    Abstract: IXFR14N100Q2
    Contextual Info: Advanced Technical Data HiPerFETTM Power MOSFETs IXFR14N100Q2 VDSS = = ID25 RDS on = Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 300 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original
    IXFR14N100Q2 ISOPLUS247 IXFR14N100Q2 PDF

    Contextual Info: HiPerFETTM Power MOSFET Q2-Class VDSS ID25 IXFR14N100Q2 RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr = 1000V = 9.5A ≤ 1.1Ω Ω ≤ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS


    Original
    IXFR14N100Q2 300ns ISOPLUS247 E153432 14N100Q2 05-28-08-B PDF

    14N100Q2

    Abstract: ISOPLUS247 IXFR14N100Q2
    Contextual Info: IXFR14N100Q2 HiPerFETTM Power MOSFET Q2-Class VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr = 1000V = 9.5A ≤ 1.1Ω Ω ≤ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS


    Original
    IXFR14N100Q2 300ns ISOPLUS247 E153432 14N100Q2 05-28-08-B 14N100Q2 ISOPLUS247 IXFR14N100Q2 PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original
    D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 PDF