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IXFP4N100PM Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFP4N100PM		IXYS	MOSFET N-CH 1000V 2.1A TO220	Original	PDF	119.33KB

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IXYS Corporation IXFP4N100PM MOSFET N-CH 1000V 2.1A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFP4N100PM	Tube			300	1 - 10 - 100 - 1000 $4.48 10000 $4.48	Buy Now
Mouser Electronics	IXFP4N100PM		407			1 $9.30 10 $6.55 100 $4.72 1000 $4.22 10000 $4.22	Buy Now
TTI	IXFP4N100PM	Tube			300	1 - 10 - 100 - 1000 $4.16 10000 $4.16	Buy Now
TME	IXFP4N100PM				1	1 $6.71 10 $6.71 100 $5.08 1000 $3.78 10000 $3.78	Get Quote
Littelfuse Inc IXFP4N100PM DiscMosfetN-CH HiPerFET-Pola TO-220AB/FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	IXFP4N100PM	Bulk		8 Weeks	50	1 - 10 - 100 $4.90 1000 $4.90 10000 $4.51	Get Quote
Onlinecomponents.com	IXFP4N100PM					1 - 10 - 100 $5.06 1000 $3.47 10000 $3.47	Buy Now

IXFP4N100PM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Technical Information IXFP4N100PM PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS on = 1000V = 2.1A   3.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 M	Original	IXFP4N100PM 4N100P 7-03-13-B	PDF
Contextual Info: Advance Technical Information IXFP4N100PM PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS on = 1000V = 2.5A Ω ≤ 3.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ	Original	IXFP4N100PM 4N100P 1-22-10-A	PDF
Contextual Info: Advance Technical Information PolarTM HiperFETTM Power MOSFET VDSS ID25 IXFP4N100PM RDS on = 1000V = 2.5A Ω ≤ 3.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ	Original	IXFP4N100PM 4N100P 1-22-10-A	PDF