Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXFN300N10P Search Results

    IXFN300N10P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFN300N10P
    		IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH SOT-227 Original PDF 4
    SF Impression Pixel

    IXFN300N10P Price and Stock

    Select Manufacturer

    IXYS Corporation IXFN300N10P

    MOSFET N-CH 100V 295A SOT227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN300N10P Tube 101 1
    • 1 $46.24
    • 10 $34.80
    • 100 $32.38
    • 1000 $32.38
    • 10000 $32.38
    		Buy Now
    Mouser Electronics IXFN300N10P 1,413
    • 1 $46.23
    • 10 $34.79
    • 100 $32.38
    • 1000 $32.38
    • 10000 $32.38
    		Buy Now
    Future Electronics IXFN300N10P Tube 300
    • 1 -
    • 10 $38.11
    • 100 $37.36
    • 1000 $37.01
    • 10000 $37.01
    		Buy Now
    TTI IXFN300N10P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $32.38
    • 10000 $32.38
    		Buy Now
    TME IXFN300N10P 1
    • 1 $54.91
    • 10 $43.65
    • 100 $43.65
    • 1000 $43.65
    • 10000 $43.65
    		Get Quote
    IBS Electronics IXFN300N10P 300
    • 1 -
    • 10 -
    • 100 $52.30
    • 1000 $53.35
    • 10000 $53.35
    		Buy Now

    Littelfuse Inc IXFN300N10P

    Discmsft N-Ch Hiperfet-Polasot-227B(Mini/ Tube |Littelfuse IXFN300N10P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXFN300N10P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $33.94
    • 10000 $33.94
    		Buy Now
    RS IXFN300N10P Bulk 8 Weeks 10
    • 1 -
    • 10 $50.09
    • 100 $47.08
    • 1000 $47.08
    • 10000 $47.08
    		Get Quote

    IXFN300N10P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXFN300N10P

    Abstract: 300N10P
    Contextual Info: Preliminary Technical Information IXFN300N10P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXFN300N10P 100ms 300N10P IXFN300N10P PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFN300N10P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXFN300N10P 100ms 300N10P PDF

    Contextual Info: IXFN300N10P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25C to 175C 100 V VDGR TJ = 25C to 175C, RGS = 1M 100 V VGSS Continuous 20


    Original     		IXFN300N10P 100ms 300N10P PDF