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    IXFK170N10P Search Results

    IXFK170N10P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFK170N10P
    		IXYS PolarHT HiPerFET Power MOSFET Original PDF 105.56KB 5
    SF Impression Pixel

    IXFK170N10P Price and Stock

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    IXYS Corporation IXFK170N10P

    MOSFET N-CH 100V 170A TO264AA
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    DigiKey IXFK170N10P Tube 1
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    Mouser Electronics IXFK170N10P
    • 1 $14.77
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    Future Electronics IXFK170N10P Tube 37 Weeks 300
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    TTI IXFK170N10P Tube 300
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    TME IXFK170N10P 1
    • 1 $14.45
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    IBS Electronics IXFK170N10P 300
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    Littelfuse Inc IXFK170N10P

    Discmosfetn-Ch Hiperfet-Polar To-264(3)/ Tube |Littelfuse IXFK170N10P
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    Newark IXFK170N10P Bulk 300
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    RS IXFK170N10P Bulk 8 Weeks 25
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    IXFK170N10P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXFH170N10P

    Abstract: IXFK170N10P 01-07-10-C
    Contextual Info: IXFH170N10P IXFK170N10P PolarTM HiperFETTM Power MOSFET VDSS ID25 = 100V = 170A Ω ≤ 9mΩ ≤ 150ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions VDSS TJ = 25°C to 175°C Maximum Ratings


    Original     		IXFH170N10P IXFK170N10P 150ns O-247 170N10P 01-07-10-C IXFH170N10P IXFK170N10P 01-07-10-C PDF

    Contextual Info: PolarTM HiperFETTM Power MOSFET VDSS ID25 IXFH170N10P IXFK170N10P = 100V = 170A Ω ≤ 9mΩ ≤ 150ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions VDSS TJ = 25°C to 175°C Maximum Ratings


    Original     		IXFH170N10P IXFK170N10P 150ns O-247 170N10P 01-07-10-C PDF