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    IXFH16N120P Search Results

    IXFH16N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFH16N120P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 16A TO-247 Original PDF 5
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    IXFH16N120P Price and Stock

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    Littelfuse Inc IXFH16N120P

    MOSFET N-CH 1200V 16A TO247AD
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    DigiKey IXFH16N120P Tube 283 1
    • 1 $20.64
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    IXYS Corporation IXFH16N120P

    MOSFETs 1
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    Mouser Electronics IXFH16N120P
    • 1 $21.13
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    Future Electronics IXFH16N120P Tube 300
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    TTI IXFH16N120P Tube 300
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    TME IXFH16N120P 1
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    Chip 1 Exchange IXFH16N120P 4,230
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    Chip Stock IXFH16N120P 6,600
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    IBS Electronics IXFH16N120P 960 30
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    New Advantage Corporation IXFH16N120P 2,654 1
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    Littelfuse Inc IXFH16N120P (POLAR HIPERFET SERIES)

    Mosfet, N-Ch, 1.2Kv, 16A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:1.2Kv; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:6.5V Rohs Compliant: Yes |Littelfuse IXFH16N120P
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    Newark IXFH16N120P (POLAR HIPERFET SERIES) Bulk 300 1
    • 1 $20.63
    • 10 $16.82
    • 100 $13.02
    • 1000 $11.82
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    IXYS Integrated Circuits Division IXFH16N120P

    MOSFET N-CH 1200V 16A TO-247
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    Win Source Electronics IXFH16N120P 5,100
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    IXFH16N120P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH16N120P IXFT16N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings


    Original     		IXFH16N120P IXFT16N120P 300ns O-247 25VDS 16N120P PDF

    IXFH16N120P

    Contextual Info: IXFT16N120P IXFH16N120P PolarTM HiPerFETTM Power MOSFETs VDSS ID25 = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFT16N120P IXFH16N120P 300ns O-268 O-247 16N120P 09-12-12-B IXFH16N120P PDF

    IXFH16N120

    Abstract: ixfh16n120p 16N120P 1200v to247 MOSFET
    Contextual Info: IXFH16N120P IXFT16N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFH16N120P IXFT16N120P 300ns O-247 16N120P 4-03-08-A IXFH16N120 ixfh16n120p 1200v to247 MOSFET PDF

    IXFH16N120

    Contextual Info: VDSS ID25 IXFH16N120P IXFT16N120P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFH16N120P IXFT16N120P 300ns O-247 16N120P 4-03-08-A IXFH16N120 PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF