IXBF42N300 Search Results
IXBF42N300 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| IXBF42N300 |
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Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 3000V TO247 | Original | 203.61KB |
IXBF42N300 Price and Stock
IXYS Corporation IXBF42N300MOSFETs ISOPLUS 3KV 24A DIODE |
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IXBF42N300 | Tube | 300 |
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Littelfuse Inc IXBF42N300 |
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IXBF42N300 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V IXBF42N300 (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C |
Original |
IC110 IXBF42N300 100ms 42N300 | |
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Contextual Info: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF42N300 VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C |
Original |
IXBF42N300 IC110 IC110 100ms 100ms 42N300 | |
IXBFContextual Info: Advance Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF42N300 VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 3000 |
Original |
IXBF42N300 IC110 IC110 100ms 100ms 42N300 IXBF |