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    IRFS460 Search Results

    IRFS460 Functional Equivalents (3)

    The Functional Equivalents tab will give you options that are likely to match the same function of IRFS460, but it may not fit your design.

    Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    Part Number Manufacturer Composite Price Description
    IPP50R250CPXKSA1 Infineon Technologies AG $1.5774 Power Field-Effect Transistor, 13A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    IPP50R250CP Infineon Technologies AG Check for Price Power Field-Effect Transistor, 13A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    IPP50R250CPHKSA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 13A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

    IRFS460 Datasheets (2)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRFS460
    		Fairchild Semiconductor Advance Power MOSFET Scan PDF 155.04KB 6
    IRFS460
    		Fairchild Semiconductor Advanced Power MOSFET Scan PDF 155.03KB 6

    IRFS460 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IRFS460 A d van ced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 É 2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


    OCR Scan     		IRFS460 PDF

    IRFS460

    Contextual Info: $GYDQFHG 3RZHU 026 7 IRFS460 FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.25Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 12.4 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V


    Original     		IRFS460 IRFS460 PDF

    IRFS460

    Abstract: GS 069 HF
    Contextual Info: IRFS460 A dvanced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 Í2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V


    OCR Scan     		IRFS460 IRFS460 GS 069 HF PDF

    IRFS460

    Abstract: GS 069 HF
    Contextual Info: IRFS460 A dvanced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 Í2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V


    OCR Scan     		IRFS460 IRFS460 GS 069 HF PDF

    Contextual Info: IRFS460 Advanced Power MOSFET FEATURES B V = 500 V ^ D S o n = 0 .2 5 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V


    OCR Scan     		IRFS460 PDF

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Contextual Info: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original     		IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80 PDF