IRFS11N50ATRL Search Results
IRFS11N50ATRL Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRFS11N50ATRL | International Rectifier | 500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | Original | 126.44KB | 9 | ||
| IRFS11N50ATRL | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 11A D2PAK | Original | 10 | |||
| IRFS11N50ATRLP | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 11A D2PAK | Original | 10 |
IRFS11N50ATRL Price and Stock
Vishay Intertechnologies IRFS11N50ATRLPMOSFET N-CH 500V 11A TO263AB |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IRFS11N50ATRLP | Digi-Reel | 273 | 1 |
|
Buy Now | |||||
| IRFS11N50ATRLP | Cut Tape | 273 | 1 |
|
Buy Now | ||||||
| IRFS11N50ATRLP | Tape & Reel | 800 |
|
Buy Now | |||||||
|
IRFS11N50ATRLP | Tape & Reel | 12 Weeks | 800 |
|
Buy Now | |||||
| IRFS11N50ATRLP | Tape & Reel | 12 Weeks | 800 |
|
Buy Now | ||||||
|
IRFS11N50ATRLP | Reel | 5,600 | 800 |
|
Buy Now | |||||
| IRFS11N50ATRLP | Reel | 5,600 | 800 |
|
Buy Now | ||||||
Vishay Intertechnologies IRFS11N50ATRLMOSFET N-CH 500V 11A D2PAK |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IRFS11N50ATRL | Tape & Reel | 800 |
|
Buy Now | ||||||
|
IRFS11N50ATRL | Tape & Reel | 800 |
|
Get Quote | ||||||
IRFS11N50ATRL Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IRFS11N50A
Abstract: SiHFS11N50A SiHFS11N50A-E3 irfs11n50apbf
|
Original |
IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 11-Mar-11 IRFS11N50A SiHFS11N50A-E3 irfs11n50apbf | |
|
Contextual Info: IRFS11N50A, SiHFS11N50A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Available Ruggedness • Fully Characterized Capacitance |
Original |
IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
|
Original |
100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter | |
IRFS11N50APBF
Abstract: IRFS11N50A SiHFS11N50A SiHFS11N50A-E3
|
Original |
IRFS11N50A, SiHFS11N50A O-263) 18-Jul-08 IRFS11N50APBF IRFS11N50A SiHFS11N50A-E3 | |
IRFS11N50A
Abstract: SiHFS11N50A SiHFS11N50A-E3 irfs11n50apbf
|
Original |
IRFS11N50A, SiHFS11N50A O-263) 18-Jul-08 IRFS11N50A SiHFS11N50A-E3 irfs11n50apbf | |
|
Contextual Info: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition |
Original |
IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 11-Mar-11 | |
S10 diodeContextual Info: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition |
Original |
IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 18-Jul-08 S10 diode | |
|
Contextual Info: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition |
Original |
IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
IRFS11N50APBFContextual Info: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition |
Original |
IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFS11N50APBF | |
|
Contextual Info: IRFS11N50A, SiHFS11N50A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Available Ruggedness • Fully Characterized Capacitance |
Original |
IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
IRFS11N50APBFContextual Info: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition |
Original |
IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 11-Mar-11 IRFS11N50APBF |