IRFI830 Search Results

Contextual Info: IRFW830B / IRFI830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

SiHFI830G

Abstract: IRFI830G SiHFI830G-E3
Contextual Info: IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance

Contextual Info: International e ?r R ectifier HEXFET P o w e r M O S F E T • • • • • 4655452 0015175 b^O H I N R PD-9.646A IRFI830G INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRM S Sink to Lead Creepage Dist.= 4.8mm Dynam ic dv/dt Rating

Contextual Info: PD - 94847 IRFI830GPbF • Lead-Free www.irf.com 1 11/17/03 IRFI830GPbF 2 www.irf.com IRFI830GPbF www.irf.com 3 IRFI830GPbF 4 www.irf.com IRFI830GPbF www.irf.com 5 IRFI830GPbF 6 www.irf.com IRFI830GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches

IRFI830G

Abstract: S203A
Contextual Info: PD-9.646A International E Rectifier IRFI830G HEXFET® Power MOSFET • • • • • Isolated Package High Voltage isolation= 2.5KVRMS ® Sink to Lead Creepage Dist,= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance ^D S S ~ 5 0 0 V ^DS on = 1 - 5 ß

SiHFI830G

Contextual Info: IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance

Contextual Info: IRFI830 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)3.1 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)12 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)32 Minimum Operating Temp (øC)

Contextual Info: PD - 94847 IRFI830GPbF • Lead-Free Document Number: 91159 11/17/03 www.vishay.com 1 IRFI830GPbF Document Number: 91159 www.vishay.com 2 IRFI830GPbF Document Number: 91159 www.vishay.com 3 IRFI830GPbF Document Number: 91159 www.vishay.com 4 IRFI830GPbF Document Number: 91159

TC250C

Abstract: IRFI830G E16Q
Contextual Info: International S Rectifier PD-9.646A IRFI830G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V Ds s = 5 0 0 V ^DS on = 1 l D = 3.1 A

AN609

Abstract: IRFI830G SiHFI830G
Contextual Info: IRFI830G_RC, SiHFI830G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

SiHFI830G

Contextual Info: IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance

Contextual Info: IRFW830B / IRFI830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

SiHFI830G

Abstract: IRFI830G SiHFI830G-E3
Contextual Info: IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance

Contextual Info: PD - 94847 IRFI830GPbF • Lead-Free Document Number: 91159 11/17/03 www.vishay.com 1 IRFI830GPbF Document Number: 91159 www.vishay.com 2 IRFI830GPbF Document Number: 91159 www.vishay.com 3 IRFI830GPbF Document Number: 91159 www.vishay.com 4 IRFI830GPbF Document Number: 91159

Contextual Info: IRFW830B / IRFI830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

SiHFI830G

Contextual Info: IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance

IRFI830G

Abstract: SiHFI830G SiHFI830G-E3
Contextual Info: IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance

SiHFI830G

Contextual Info: IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance

Contextual Info: IRFI830G Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)3.1 I(DM) Max. (A) Pulsed I(D)2.0 @Temp (øC)100# IDM Max (@25øC Amb)12 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)35 Minimum Operating Temp (øC)-55õ

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

sumida 94V-0

Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
Contextual Info: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

IRF470

Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
Contextual Info: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0