IRFB9N30APBF Search Results

marking 93A

Contextual Info: PD- 95350 IRFB9N30APbF HEXFET Power MOSFET l l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleing Dynamic dv/dt Rated Simple Drive Requirements l Lead-Free D VDSS = 300V RDS on = 0.45Ω G ID = 9.3A S Description Third Generation HEXFETs from International Rectifier provide the designer

IRFB9N30A

Abstract: SiHFB9N30A SiHFB9N30A-E3
Contextual Info: IRFB9N30A, SiHFB9N30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dv/dt Rating 300 RDS(on) (Ω) Available VGS = 10 V Qg (Max.) (nC) 33 Qgs (nC) 6.9 Qgd (nC) 12 Configuration • Repetitive Avalanche Rated 0.45 RoHS* COMPLIANT

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

Contextual Info: IRFB9N30A, SiHFB9N30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dv/dt Rating 300 RDS(on) (Ω) VGS = 10 V 33 Qgs (nC) 6.9 Qgd (nC) 12 Configuration RoHS* • Repetitive Avalanche Rated 0.45 Qg (Max.) (nC) Available COMPLIANT

Contextual Info: IRFB9N30A, SiHFB9N30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dv/dt Rating 300 RDS(on) (Ω) Available VGS = 10 V Qg (Max.) (nC) 33 Qgs (nC) 6.9 Qgd (nC) 12 Configuration • Repetitive Avalanche Rated 0.45 RoHS* COMPLIANT