IPP80N04S3-03 |
|
Infineon Technologies
|
Single: N-Channel 40V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 3.5 mOhm; ID (max): 80.0 A; RthJC (max): 0.8 K/W; |
|
Original |
PDF
|
IPP80N04S303AKSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 80A TO220-3 |
|
Original |
PDF
|
IPP80N04S3-04 |
|
Infineon Technologies
|
Single: N-Channel 40V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 4.1 mOhm; ID (max): 80.0 A; RthJC (max): 1.1 K/W; |
|
Original |
PDF
|
IPP80N04S3-06 |
|
Infineon Technologies
|
Single: N-Channel 40V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 5.7 mOhm; ID (max): 80.0 A; RthJC (max): 1.5 K/W; |
|
Original |
PDF
|
IPP80N04S306AKSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 80A TO220-3 |
|
Original |
PDF
|
IPP80N04S3-H4 |
|
Infineon Technologies
|
Single: N-Channel 40V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 4.8 mOhm; ID (max): 80.0 A; RthJC (max): 1.3 K/W; |
|
Original |
PDF
|
IPP80N04S3H4AKSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 80A TO220-3 |
|
Original |
PDF
|