IPP100N06S3-03 |
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Infineon Technologies
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OptiMOS -T Power-Transistor |
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Original |
PDF
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IPP100N06S3-03 |
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Infineon Technologies
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Single: N-Channel 55V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 3.3 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; |
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Original |
PDF
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IPP100N06S3-04 |
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Infineon Technologies
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Single: N-Channel 55V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.4 mOhm; ID (max): 100.0 A; RthJC (max): 0.7 K/W; |
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Original |
PDF
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IPP100N06S3L-03 |
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Infineon Technologies
|
OptiMOS -T Power-Transistor |
|
Original |
PDF
|
IPP100N06S3L-03 |
|
Infineon Technologies
|
Single: N-Channel 55V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 3.0 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; |
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Original |
PDF
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IPP100N06S3L-04 |
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Infineon Technologies
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Single: N-Channel 55V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 3.8 mOhm; ID (max): 100.0 A; RthJC (max): 0.7 K/W; |
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Original |
PDF
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