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    IPI80N06S4L-05, Search Results

    IPI80N06S4L-05, Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPI80N06S4L-05
    		Infineon Technologies Single: N-Channel 60V MOSFETs; Package: PG-TO262-3; Technology: OptiMOS -T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 4.8 mOhm; ID (max): 80.0 A; RthJC (max): 1.4 K/W; Original PDF 170.65KB 9
    IPI80N06S4L05AKSA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 80A TO262-3 Original PDF 171.67KB
    IPI80N06S4L05AKSA2
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH TO262-3 Original PDF 171.67KB
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    IPI80N06S4L-05, Price and Stock

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    Rochester Electronics LLC IPI80N06S4L05AKSA1

    MOSFET N-CH 60V 80A TO262-3
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    DigiKey IPI80N06S4L05AKSA1 Tube 294
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    Infineon Technologies AG IPI80N06S4L05AKSA1

    Power Field-Effect Transistor, 80A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IPI80N06S4L05AKSA1 300 1
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    • 100 $0.98
    • 1000 $0.82
    • 10000 $0.73
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