IPI80N06S4-05 |
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Infineon Technologies
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Single: N-Channel 60V MOSFETs; Package: PG-TO262-3; Technology: OptiMOS -T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 5.4 mOhm; ID (max): 80.0 A; RthJC (max): 1.4 K/W; |
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IPI80N06S405AKSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 80A TO262-3 |
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IPI80N06S405AKSA2 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL_55/60V |
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IPI80N06S4-07 |
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Infineon Technologies
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Single: N-Channel 60V MOSFETs; Package: PG-TO262-3; Technology: OptiMOS -T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 7.1 mOhm; ID (max): 80.0 A; RthJC (max): 1.9 K/W; |
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IPI80N06S407AKSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 80A TO262-3 |
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IPI80N06S407AKSA2 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 80A TO262-3 |
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IPI80N06S4L-05 |
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Infineon Technologies
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Single: N-Channel 60V MOSFETs; Package: PG-TO262-3; Technology: OptiMOS -T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 4.8 mOhm; ID (max): 80.0 A; RthJC (max): 1.4 K/W; |
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IPI80N06S4L05AKSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 80A TO262-3 |
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Original |
PDF
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IPI80N06S4L05AKSA2 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH TO262-3 |
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PDF
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IPI80N06S4L-07 |
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Infineon Technologies
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Single: N-Channel 60V MOSFETs; Package: PG-TO262-3; Technology: OptiMOS -T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 6.4 mOhm; ID (max): 80.0 A; RthJC (max): 1.9 K/W; |
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IPI80N06S4L07AKSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 80A TO262-3 |
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Original |
PDF
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IPI80N06S4L07AKSA2 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 80A TO262-3 |
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Original |
PDF
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