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    IPG20N06S3L-35 Search Results

    IPG20N06S3L-35 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPG20N06S3L-35
    		Infineon Technologies Dual: N-Channel 55V MOSFETs; Package: PG-TDSON-8; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 35.0 mOhm; ID (max): 20.0 A; RthJC (max): 5.0 K/W; Original PDF 162.8KB 9
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    IPG20N06S3L-35 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPG20N06S3L-35

    MOSFET 2N-CH 55V 20A 8TDSON
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    DigiKey IPG20N06S3L-35 Reel
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    Vyrian IPG20N06S3L-35 504
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    Infineon Technologies AG IPG20N06S3L35

    OPTIMOS-T POWER-TRANSISTOR Power Field-Effect Transistor, 20A I(D), 55V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA IPG20N06S3L35 750
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