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    IPD30N06S3L-20 Search Results

    IPD30N06S3L-20 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPD30N06S3L-20
    		Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO252-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 20.0 mOhm; ID (max): 30.0 A; RthJC (max): 3.3 K/W; Original PDF 180.83KB 9
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    IPD30N06S3L-20 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPD30N06S3L-20

    Power Field-Effect Transistor, 30A I(D), 55V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IPD30N06S3L-20 500 1
    • 1 -
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    • 100 $0.44
    • 1000 $0.36
    • 10000 $0.32
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