IPB80N06S3L-05 |
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Infineon Technologies
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.5 mOhm; ID (max): 80.0 A; RthJC (max): 0.9 K/W; |
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IPB80N06S3L-06 |
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Infineon Technologies
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 5.6 mOhm; ID (max): 80.0 A; RthJC (max): 1.1 K/W; |
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IPB80N06S3L-06 |
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Infineon Technologies
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OptiMOS -T Power-Transistor |
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IPB80N06S3L-08 |
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Infineon Technologies
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 7.6 mOhm; ID (max): 80.0 A; RthJC (max): 1.4 K/W; |
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IPB80N06S3L-08 |
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Infineon Technologies
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OptiMOS -T Power-Transistor |
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Original |
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