IPB80N06S2-09 Search Results
IPB80N06S2-09 Datasheets (3)
Infineon Technologies
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPB80N06S2-09 |
|
Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 8.8 mOhm; ID (max): 80.0 A; RthJC (max): 0.8 K/W; | Original | 156.46KB | 8 | ||
| IPB80N06S209ATMA1 |
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 | Original | 152.42KB | |||
| IPB80N06S209ATMA2 |
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 | Original | 157.45KB |
IPB80N06S2-09 Price and Stock
Infineon Technologies AG
Infineon Technologies AG IPB80N06S209ATMA2MOSFET N-CH 55V 80A TO263-3 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IPB80N06S209ATMA2 | Digi-Reel | 854 | 1 |
|
Buy Now | |||||
|
IPB80N06S209ATMA2 | Tape & Reel | 9 Weeks | 1,000 |
|
Buy Now | |||||
|
IPB80N06S209ATMA2 | 864 |
|
Buy Now | |||||||
|
IPB80N06S209ATMA2 | 29,000 | 1,000 |
|
Buy Now | ||||||
|
IPB80N06S209ATMA2 | 977 | 1 |
|
Buy Now | ||||||
|
IPB80N06S209ATMA2 | 10 Weeks | 1,000 |
|
Buy Now | ||||||
Infineon Technologies AG IPB80N06S209ATMA1MOSFET N-CH 55V 80A TO263-3 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IPB80N06S209ATMA1 | Tape & Reel |
|
Buy Now | |||||||
|
IPB80N06S209ATMA1 | 429 | 2 |
|
Buy Now | ||||||
|
IPB80N06S209ATMA1 | 343 |
|
Buy Now | |||||||
|
IPB80N06S209ATMA1 | 9,679 |
|
Get Quote | |||||||
Infineon Technologies AG IPB80N06S209OPTIMOS POWER-TRANSISTOR Power Field-Effect Transistor, 80A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IPB80N06S209 | 9,669 |
|
Get Quote | |||||||