IPB80N06S2-05 |
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Infineon Technologies
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.8 mOhm; ID (max): 80.0 A; RthJC (max): 0.5 K/W; |
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IPB80N06S205ATMA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 |
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IPB80N06S2-07 |
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Infineon Technologies
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 6.3 mOhm; ID (max): 80.0 A; RthJC (max): 0.6 K/W; |
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IPB80N06S207ATMA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 |
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IPB80N06S207ATMA4 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 |
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IPB80N06S2-08 |
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Infineon Technologies
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 7.7 mOhm; ID (max): 80.0 A; RthJC (max): 0.7 K/W; |
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IPB80N06S208ATMA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 |
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IPB80N06S208ATMA2 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 |
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IPB80N06S2-09 |
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Infineon Technologies
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 8.8 mOhm; ID (max): 80.0 A; RthJC (max): 0.8 K/W; |
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IPB80N06S209ATMA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 |
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Original |
PDF
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IPB80N06S209ATMA2 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 |
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Original |
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IPB80N06S2-H5 |
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Infineon Technologies
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 5.2 mOhm; ID (max): 80.0 A; RthJC (max): 0.5 K/W; |
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IPB80N06S2H5ATMA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 |
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IPB80N06S2H5ATMA2 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 |
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IPB80N06S2L-05 |
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Infineon Technologies
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.5 mOhm; ID (max): 80.0 A; RthJC (max): 0.5 K/W; |
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IPB80N06S2L05ATMA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 |
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IPB80N06S2L-06 |
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Infineon Technologies
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 6.0 mOhm; ID (max): 80.0 A; RthJC (max): 0.6 K/W; |
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IPB80N06S2L06ATMA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 |
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IPB80N06S2L06ATMA2 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 |
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Original |
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IPB80N06S2L-07 |
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Infineon Technologies
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 6.7 mOhm; ID (max): 80.0 A; RthJC (max): 0.7 K/W; |
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