IPB80N04S3-03 |
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Infineon Technologies
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Single: N-Channel 40V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 3.2 mOhm; ID (max): 80.0 A; RthJC (max): 0.8 K/W; |
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IPB80N04S303ATMA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 80A TO263-3 |
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IPB80N04S3-04 |
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Infineon Technologies
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Single: N-Channel 40V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 3.8 mOhm; ID (max): 80.0 A; RthJC (max): 1.1 K/W; |
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IPB80N04S304ATMA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 80A TO263-3 |
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Original |
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IPB80N04S3-06 |
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Infineon Technologies
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Single: N-Channel 40V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 5.4 mOhm; ID (max): 80.0 A; RthJC (max): 1.5 K/W; |
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IPB80N04S306ATMA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 80A TO263-3 |
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IPB80N04S3-H4 |
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Infineon Technologies
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Single: N-Channel 40V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 4.5 mOhm; ID (max): 80.0 A; RthJC (max): 1.3 K/W; |
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IPB80N04S3H4ATMA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 80A TO263-3 |
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Original |
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