IPB100N04S2-04 |
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Infineon Technologies
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OptiMOS Power-Transistor |
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Original |
PDF
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IPB100N04S204ATMA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 |
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Original |
PDF
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IPB100N04S204ATMA4 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 |
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Original |
PDF
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IPB100N04S2L-03 |
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Infineon Technologies
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OptiMOS Power-Transistor |
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Original |
PDF
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IPB100N04S2L03ATMA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 |
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Original |
PDF
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IPB100N04S2L03ATMA2 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 |
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Original |
PDF
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IPB100N04S3-03 |
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Infineon Technologies
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Single: N-Channel 40V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 2.5 mOhm; ID (max): 100.0 A; RthJC (max): 0.7 K/W; |
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Original |
PDF
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IPB100N04S303ATMA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 |
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Original |
PDF
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IPB100N04S4-H2 |
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Infineon Technologies
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 100A TO263-3-2 |
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Original |
PDF
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IPB100N04S4H2ATMA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3-2 |
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Original |
PDF
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IPB100N06S2-05 |
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Infineon Technologies
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.7 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; |
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Original |
PDF
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IPB100N06S205ATMA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 |
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Original |
PDF
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IPB100N06S205ATMA4 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 |
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Original |
PDF
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IPB100N06S2L-05 |
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Infineon Technologies
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.4 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; |
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Original |
PDF
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IPB100N06S2L05ATMA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 |
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Original |
PDF
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IPB100N06S2L05ATMA2 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 |
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Original |
PDF
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IPB100N06S3-03 |
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Infineon Technologies
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 3.0 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; |
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Original |
PDF
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IPB100N06S3-03 |
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Infineon Technologies
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OptiMOS -T Power-Transistor |
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Original |
PDF
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IPB100N06S3-04 |
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Infineon Technologies
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.1 mOhm; ID (max): 100.0 A; RthJC (max): 0.7 K/W; |
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Original |
PDF
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IPB100N06S3L-03 |
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Infineon Technologies
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 2.7 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; |
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Original |
PDF
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