IGC109T120T6RL Search Results
IGC109T120T6RL Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IGC109T120T6RL |
|
IGBT Chips; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; | Original | 67.79KB | 5 |
IGC109T120T6RL Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: IGC109T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives |
Original |
IGC109T120T6RL L7742C, | |
|
Contextual Info: IGC109T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives |
Original |
IGC109T120T6RL IGC109T120T6 L7742C, |