HZU11 |
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Hitachi Semiconductor
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Silicon Epitaxial Planar Zener Diode for Stabilizer |
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PDF
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HZU11 |
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Renesas Technology
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Original |
PDF
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HZU11 |
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Unknown
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The Diode Data Book with Package Outlines 1993 |
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Scan |
PDF
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HZU11A1L |
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Renesas Technology
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SMD, Zener Diode for Low Noise, 11V, Z-diode (operation in reverse direction), Stamping Code:111 |
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PDF
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HZU11A1L |
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Renesas Technology
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Silicon Epitaxial Planar Zener Diode for Low Noise Application |
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Original |
PDF
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HZU11A1L |
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Renesas Technology
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Zener Diode; Application: Low noise; Pd (mW): 150; Vz (V): 9.5 to 9.9; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP |
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Original |
PDF
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HZU11A1L-E |
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Renesas Technology
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Diode Zener SINGLE 9.7V 2% 150MW 2URP |
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Original |
PDF
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HZU11A2L |
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Renesas Technology
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Silicon Epitaxial Planar Zener Diode for Low Noise Application |
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Original |
PDF
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HZU11A2L |
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Renesas Technology
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SMD, Zener Diode for Low Noise, 11V, Z-diode (operation in reverse direction), Stamping Code:112 |
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Original |
PDF
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HZU11A2L |
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Renesas Technology
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Zener Diode; Application: Low noise; Pd (mW): 150; Vz (V): 9.7 to 10.1; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP |
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Original |
PDF
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HZU11A2L-E |
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Renesas Technology
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Diode Zener SINGLE 9.9V 2% 150MW 2URP |
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Original |
PDF
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HZU11A3L |
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Renesas Technology
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Silicon Epitaxial Planar Zener Diode for Low Noise Application |
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Original |
PDF
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HZU11A3L |
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Renesas Technology
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SMD, Zener Diode for Low Noise, 11V, Z-diode (operation in reverse direction), Stamping Code:113 |
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Original |
PDF
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HZU11A3L |
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Renesas Technology
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Zener Diode; Application: Low noise; Pd (mW): 150; Vz (V): 9.9 to 10.3; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP |
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Original |
PDF
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HZU11B |
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Renesas Technology
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Silicon Epitaxial Planar Zener Diodes for Stabilizer |
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Original |
PDF
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HZU11B |
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Renesas Technology
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Silicon Epitaxial Planar Zener Diodes for Stabilizer |
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Original |
PDF
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HZU11B |
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Renesas Technology
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Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP |
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Original |
PDF
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HZU11B1 |
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Renesas Technology
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Silicon Epitaxial Planar Zener Diodes for Stabilizer |
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Original |
PDF
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HZU11B1 |
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Renesas Technology
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Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 10.88; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP |
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Original |
PDF
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HZU11B1-E |
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Renesas Technology
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Diode Zener SINGLE 10.66V 2% 200MW 2URP |
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Original |
PDF
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