HFW50N06 Search Results
HFW50N06 Datasheets Context Search
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Contextual Info: BVDSS = 60 V RDS on = 18 mΩ HFW50N06 / HFI50N06 ID = 50 A 60V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW50N06 Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFI50N06 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances |
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HFW50N06 HFI50N06 HFW50N06 |