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HAT2105R Datasheets (1)

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Renesas Technology

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
HAT2105R		Renesas Technology	MOSFET, Switching; VDSS (V): 200; ID (A): 0.5; Pch : -; RDS (ON) typ. (ohm) @10V: 1.6; RDS (ON) typ. (ohm) @4V[4.5V]: 1.9; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 120; toff ( us) typ: -; Package: SOP-8	Original	PDF	61.25KB	4

HAT2105R Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
HAT2105R Contextual Info: HAT2105R Silicon N Channel Power MOS FET High Speed Power Switching REJ03G1369-0100 Rev.1.00 Apr 04, 2006 Features • Low on-resistance • Capable of 4 V gate drive • High density mounting Outline RENESAS Package code: PRSP0008DD-D Package name: SOP-8<FP-8DAV>	Original	HAT2105R REJ03G1369-0100 PRSP0008DD-D HAT2105R	PDF
Contextual Info: Preliminary Datasheet HAT2105R R07DS0552EJ0200 Previous: REJ03G1369-0100 Rev.2.00 Oct 11, 2011 Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 1.6  typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25°C)  Capable of 4 V gate drive	Original	HAT2105R R07DS0552EJ0200 REJ03G1369-0100) PRSP0008DD-D	PDF
Contextual Info: Preliminary Datasheet HAT2105R R07DS0552EJ0200 Previous: REJ03G1369-0100 Rev.2.00 Oct 11, 2011 Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 1.6  typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25°C)  Capable of 4 V gate drive	Original	HAT2105R R07DS0552EJ0200 REJ03G1369-0100) PRSP0008DD-D	PDF
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055	PDF
HAT2105R Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF
1002ds Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5	Original	24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as	PDF