GPP10D
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SUNMATE electronic Co., LTD
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Axial leaded silicon rectifier diode in DO-41 package, 1.0 A average rectified current, 50 to 1000 V peak repetitive reverse voltage, 30 A non-repetitive surge current, low forward voltage drop, high reliability, and solderable plated leads.GPP10A-GPP10M axial leaded silicon rectifier diodes in DO-41 package, 1.0 A average rectified current, 50 to 1000 V peak repetitive reverse voltage, low forward voltage drop, high surge current capability, operating junction temperature -65 to +125°C.GPP10A-GPP10M axial leaded silicon rectifier diodes in DO-41 molded plastic case, rated for 1.0 A average rectified current, with voltage ranges from 50 to 1000 V, featuring low forward voltage drop, high surge current capability, and operating junction temperature from -65 to +125 °C.Axial leaded silicon rectifier diode in DO-41 package, 1.0 A average rectified current, 50 to 1000 V reverse voltage range, 30 A peak forward surge current, low forward voltage drop, high reliability, and solderable plated leads.Axial leaded silicon rectifier diode in DO-41 package, 1.0 A average rectified current, 50 to 1000 V reverse voltage range, 30 A peak surge current, low forward voltage drop, molded plastic case.GPP10A-GPP10M series DO-41 axial leaded silicon rectifier diodes feature 1.0 A average rectified current, 50 to 1000 V peak repetitive reverse voltage, low forward voltage drop, high surge current capability, and operating junction temperature from -65 to +125 °C.Axial leaded silicon rectifier diode in DO-41 package, 1.0 A average rectified current, 50 to 1000 V peak repetitive reverse voltage, 30 A non-repetitive surge current, low forward voltage drop, high reliability, and high surge capability. |
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GPP10D
