FSX027X Search Results
FSX027X FFF Equivalents (1)
The Form Fit Function (FFF) results will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts.
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description |
|---|---|---|---|
| FSX027X | FUJITSU Limited | Check for Price | RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, P-Channel, High Electron Mobility FET |
FSX027X Functional Equivalents (1)
The Functional Equivalents tab will give you options that are likely to match the same function of FSX027X, but it may not fit your design.
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description |
|---|---|---|---|
| FSX027X | SUMITOMO ELECTRIC Industries Ltd | Check for Price | RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, P-Channel, High Electron Mobility FET |
FSX027X Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FSX027X |
|
GaAs FET & HEMT Chip | Original | 53.37KB | 4 | ||
| FSX027X-E1 |
|
FET: P Channel: ID 0.15 A | Original | 53.37KB | 4 |
FSX027X Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
GaAs FET HEMT ChipsContextual Info: FSX027X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz • High Power Gain: G1dB=10dB(Typ.)@8.0GHz • Proven Reliability DRAIN DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic |
Original |
FSX027X FSX027X 12GHz. -65afety, FCSI0598M200 GaAs FET HEMT Chips | |
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Contextual Info: FSX027X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz • High Power Gain: G1dB=10dB(Typ.)@8.0GHz • Proven Reliability DRAIN DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic |
Original |
FSX027X FSX027X 12GHz. | |
GaAs FET HEMT Chips
Abstract: NF 841 FSX027X
|
Original |
FSX027X FSX027X 12GHz. FCSI0598M200 GaAs FET HEMT Chips NF 841 | |
12QHz
Abstract: FSX027X GaAs FET HEMT Chips fujitsu gaas fet
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OCR Scan |
FSX027X FSX027X 12GHz. FCSI0598M200 12QHz GaAs FET HEMT Chips fujitsu gaas fet | |
GaAs FET HEMT Chips
Abstract: NF 841 12GHz FSX027X
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Original |
FSX027X FSX027X 12GHz. GaAs FET HEMT Chips NF 841 12GHz | |
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Contextual Info: FSX027X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz • High Power Gain: G1dB=10dB(Typ.)@8.0GHz • Proven Reliability DRAIN DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic |
Original |
FSX027X FSX027X 12GHz. |