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FQI34N20L datasheet (1)

Part Manufacturer Description Type PDF
FQI34N20L Fairchild Semiconductor 200 V Logic N-Channel MOSFET Original PDF

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2008 - Not Available

Abstract: No abstract text available
Text: FQB34N20L / FQI34N20L October 2008 QFET ® FQB34N20L / FQI34N20L 200V LOGIC N-Channel , Continuous (TC = 25° C) Drain Current IDM Drain Current VGSS FQB34N20L / FQI34N20L 200 EAS , temperature ©2008 Fairchild Semiconductor International Rev. A1, Oct 2008 FQB34N20L / FQI34N20L , Crss 700 VGS, Gate-Source Voltage [V] 5600 Capacitance [pF] FQB34N20L / FQI34N20L , ) Drain-Source Breakdown Voltage FQB34N20L / FQI34N20L Typical Characteristics 1.0  Notes : 1. VGS


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PDF FQB34N20L FQI34N20L FQI34N20L
2008 - FQB34N20L

Abstract: FQI34N20L
Text: FQB34N20L / FQI34N20L October 2008 QFET ® FQB34N20L / FQI34N20L 200V LOGIC N-Channel , Continuous (TC = 25°C) Drain Current FQB34N20L / FQI34N20L 200 Units V 31 A - Continuous , Fairchild Semiconductor International Rev. A1, Oct 2008 FQB34N20L / FQI34N20L Electrical , Voltage [V] VDS = 40V 4900 Capacitance [pF] FQB34N20L / FQI34N20L Typical Characteristics , / FQI34N20L Typical Characteristics 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100


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PDF FQB34N20L FQI34N20L FQI34N20L
2000 - FQB34N20L

Abstract: FQI34N20L
Text: FQB34N20L / FQI34N20L June 2000 QFET TM FQB34N20L / FQI34N20L 200V LOGIC N-Channel , Current FQB34N20L / FQI34N20L 200 Units V 31 A - Continuous (TC = 100°C) IDM Drain , Fairchild Semiconductor International Rev. A, June 2000 FQB34N20L / FQI34N20L Electrical , , Gate-Source Voltage [V] VDS = 40V 4900 Capacitance [pF] FQB34N20L / FQI34N20L Typical , / FQI34N20L Typical Characteristics 1.0 Notes : 1. VGS = 0 V A 2. ID = 250 0.9 0.8 -100


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PDF FQB34N20L FQI34N20L 100opment. FQI34N20L
2000 - Not Available

Abstract: No abstract text available
Text: FQB34N20L / FQI34N20L June 2000 QFET FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET , Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB34N20L / FQI34N20L 200 31 20 124 , , June 2000 FQB34N20L / FQI34N20L Electrical Characteristics Symbol Parameter TC = 25°C unless , temperature ©2000 Fairchild Semiconductor International Rev. A, June 2000 FQB34N20L / FQI34N20L , , June 2000 FQB34N20L / FQI34N20L Typical Characteristics (Continued) 1.2 2.5 BV DSS


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PDF FQB34N20L FQI34N20L FQB34N20LTM O-263
2008 - Not Available

Abstract: No abstract text available
Text: FQB34N20L / FQI34N20L N-Channel QFET® MOSFET April 2013 FQB34N20L / FQI34N20L N-Channel QFET , Current - Pulsed (Note 1) FQB34N20L / FQI34N20L 200 31 20 124 ± 20 (Note 2) (Note 1) (Note 1) (Note 3 , . FQB34N20L / FQI34N20L 0.7 40 62.5 Unit °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Corporation FQB34N20L / FQI34N20L Rev. C0 www.fairchildsemi.com FQB34N20L / FQI34N20L N-Channel QFET® MOSFET Electrical Characteristics Symbol Parameter


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PDF FQB34N20L FQI34N20L FQI34N20L
2000 - Not Available

Abstract: No abstract text available
Text: Fairchild P/N FQI34N20L - 200V N-Channel Logic Level QFET Product FQI34N20LTU Product status Full , FQB34N20L / FQI34N20L June 2000 QFET FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET , Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB34N20L / FQI34N20L 200 31 20 124 , , June 2000 FQB34N20L / FQI34N20L Electrical Characteristics Symbol Parameter TC = 25°C unless , temperature ©2000 Fairchild Semiconductor International Rev. A, June 2000 FQB34N20L / FQI34N20L


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PDF FQB34N20L FQI34N20L FQI34N20L FQI34N20LTU O-262
2002 - sfi9520

Abstract: HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 FQI20N06 FQI13N06
Text: FQI34N20L 200 Single 0.075 0.08@5V - - 55 31 180 FQI19N20L 200 Single


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PDF O-262 O-262 ISL9N303AS3 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 sfi9520 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 FQI20N06 FQI13N06
2002 - FDC6331

Abstract: fdp047an FDB045AN FQPF*13N06L FQA70N15 fdd5614p FQPF10N20 TO252-DPAK FDC6420 FDG6306P
Text: FQI33N10 FQI33N10L FQI34N20L FQI3N80 FQI46N15 FQI50N06 FQI50N06L FQI5N15 FQI6N15 FQI7N10L FQI7P20 FQI85N06


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PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF*13N06L FQA70N15 fdd5614p FQPF10N20 TO252-DPAK FDC6420 FDG6306P
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: No file text available


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PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B sss3n90a SSS7N60B SSP4N60A IRFS630A ssr2955 IRF540 complementary
Text: No file text available


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PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B sss3n90a SSS7N60B SSP4N60A IRFS630A ssr2955 IRF540 complementary
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