FDS86140 Search Results
FDS86140 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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FDS86140 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 11.2A 8SOIC | Original | 6 |
FDS86140 Price and Stock
onsemi FDS86140MOSFET N-CH 100V 11.2A 8SOIC |
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FDS86140 | Digi-Reel | 2,770 | 1 |
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FDS86140 | Reel | 16 Weeks | 2,500 |
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FDS86140 | 12,539 |
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FDS86140 | 2,274 | 21 |
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FDS86140 | Cut Strips | 1,572 | 16 Weeks | 1 |
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FDS86140 | Cut Tape | 2,744 | 5 |
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FDS86140 |
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FDS86140 | 2,500 |
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FDS86140 | 2,500 |
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FDS86140 | 13,000 |
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FDS86140 | 17 Weeks | 2,500 |
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FDS86140 | Cut Tape | 2,274 | 0 Weeks, 1 Days | 1 |
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FDS86140 | 36,971 |
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FDS86140 | 18 Weeks | 2,500 |
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FDS86140 | 10,000 | 1 |
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Fairchild Semiconductor Corporation FDS86140SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 11.2A I(D), 100V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
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FDS86140 | 70 |
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FDS86140 | 33,471 |
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FDS86140 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FDS86140 N-Channel PowerTrench MOSFET 100 V, 11.2 A, 9.8 mΩ Features General Description Max rDS on = 9.8 mΩ at VGS = 10 V, ID = 11.2 A This Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A Semiconductor‘s advanced Power Trench® process that has High performance trench technologh for extremely low rDS(on) |
Original |
FDS86140 FDS86140 | |
Contextual Info: FDS86140 N-Channel PowerTrench MOSFET 100 V, 11.2 A, 9.8 mΩ Features General Description ̈ Max rDS on = 9.8 mΩ at VGS = 10 V, ID = 11.2 A This ̈ Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A Semiconductor‘s advanced Power Trench® process that has ̈ High performance trench technologh for extremely low rDS(on) |
Original |
FDS86140 |