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FDS86140 Datasheets (1)

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Fairchild Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FDS86140		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 11.2A 8SOIC	Original	PDF		6

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onsemi FDS86140 N-Channel PowerTrench? MOSFET 100V, 11.2A, 9.8mO - Tape and Reel (Alt: FDS86140)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FDS86140	Tape & Reel		20 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $1.38	Get Quote
Mouser Electronics ()	FDS86140		9,933			1 $4.03 10 $2.73 100 $1.99 1000 $1.61 10000 $1.61	Buy Now
	FDS86140		9,926			1 $4.03 10 $2.73 100 $1.99 1000 $1.61 10000 $1.59	Buy Now
Verical ()	FDS86140		2,500		2,500	1 - 10 - 100 - 1000 - 10000 $1.38	Buy Now
	FDS86140		2,264		2	1 - 10 $1.59 100 $1.53 1000 $1.46 10000 $1.25	Buy Now
Newark ()	FDS86140	Tape & Reel	2,339		100	1 - 10 - 100 $2.20 1000 $1.85 10000 $1.85	Buy Now
	FDS86140	Cut Tape	2,339		5	1 - 10 $2.91 100 $2.20 1000 $1.85 10000 $1.85	Buy Now
TME	FDS86140				2,500	1 - 10 - 100 - 1000 - 10000 $1.79	Get Quote

Chip 1 Exchange	FDS86140		13,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	FDS86140			21 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	FDS86140			21 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics	FDS86140		20,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	FDS86140					1 - 10 - 100 $1.43 1000 $1.36 10000 $1.32	Buy Now
Fairchild Semiconductor Corporation FDS86140 SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 11.2A I(D), 100V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	FDS86140		58			1 $2.46 10 $2.46 100 $1.47 1000 $1.47 10000 $1.47	Buy Now

FDS86140 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FDS86140 N-Channel PowerTrench MOSFET 100 V, 11.2 A, 9.8 mΩ Features General Description Max rDS on = 9.8 mΩ at VGS = 10 V, ID = 11.2 A This Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A Semiconductor‘s advanced Power Trench® process that has High performance trench technologh for extremely low rDS(on)	Original	FDS86140 FDS86140	PDF
Contextual Info: FDS86140 N-Channel PowerTrench MOSFET 100 V, 11.2 A, 9.8 mΩ Features General Description ̈ Max rDS on = 9.8 mΩ at VGS = 10 V, ID = 11.2 A This ̈ Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A Semiconductor‘s advanced Power Trench® process that has ̈ High performance trench technologh for extremely low rDS(on)	Original	FDS86140	PDF