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    FDS86140 Search Results

    FDS86140 Datasheets (1)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDS86140
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 11.2A 8SOIC Original PDF 6
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    FDS86140 Price and Stock

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    onsemi FDS86140

    Trans MOSFET N-CH 100V 11.2A 8-Pin SOIC T/R
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    Verical () FDS86140 2,500 2,500
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    FDS86140 2,264 2
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    Avnet Americas FDS86140 Tape & Reel 64 Weeks 2,500
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    Mouser Electronics FDS86140 11,234
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    Arrow Electronics () FDS86140 2,500 64 Weeks 2,500
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    FDS86140 Cut Strips 2,264 1
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    Newark () FDS86140 Cut Tape 2,504 5
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    FDS86140 Tape & Reel 2,504 100
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    Onlinecomponents.com FDS86140
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    Chip 1 Exchange FDS86140 13,000
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    Wuhan P&S FDS86140 5,000 1
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    Fairchild Semiconductor Corporation FDS86140

    SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 11.2A I(D), 100V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
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    Quest Components FDS86140 58
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    ComSIT USA FDS86140 40
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    Win Source Electronics FDS86140 24,208
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    FDS86140 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDS86140 N-Channel PowerTrench MOSFET 100 V, 11.2 A, 9.8 mΩ Features General Description „ Max rDS on = 9.8 mΩ at VGS = 10 V, ID = 11.2 A This „ Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A Semiconductor‘s advanced Power Trench® process that has „ High performance trench technologh for extremely low rDS(on)


    Original
    FDS86140 FDS86140 PDF

    Contextual Info: FDS86140 N-Channel PowerTrench MOSFET 100 V, 11.2 A, 9.8 mΩ Features General Description ̈ Max rDS on = 9.8 mΩ at VGS = 10 V, ID = 11.2 A This ̈ Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A Semiconductor‘s advanced Power Trench® process that has ̈ High performance trench technologh for extremely low rDS(on)


    Original
    FDS86140 PDF