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    FDMS3604AS Datasheets (1)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMS3604AS
    		Fairchild Semiconductor FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH 30V DUAL 8-PQFN Original PDF 15
    SF Impression Pixel

    FDMS3604AS Price and Stock

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    Rochester Electronics LLC FDMS3604AS

    MOSFET 2N-CH 30V 13A/23A 8PQFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDMS3604AS Bulk 2,830 157
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    onsemi FDMS3604AS

    MOSFET 2N-CH 30V 13A/23A POWER56
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    DigiKey FDMS3604AS Tape & Reel 3,000
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    Avnet Americas FDMS3604AS Tape & Reel 3,000
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    EBV Elektronik FDMS3604AS 41 Weeks 3,000
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    FAIRCHILD FDMS3604AS

    Trans MOSFET N-CH Si 30V 13A/23A 8-Pin Power 56 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical FDMS3604AS 2,830 197
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    Fairchild Semiconductor Corporation FDMS3604AS

    Small Signal Field-Effect Transistor, 13A, 30V, 2-Element, N-Channel, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics FDMS3604AS 2,830 1
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    FDMS3604AS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDMS3604AS

    Contextual Info: FDMS3604AS PowerTrench Power Stage 30 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		FDMS3604AS FDMS3604AS PDF

    Contextual Info: FDMS3604AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		FDMS3604AS FDMS3604AS PDF

    Contextual Info: FDMS3604AS PowerTrench Power Stage 30 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		FDMS3604AS PDF