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    FDMQ8403 Search Results

    FDMQ8403 Datasheets (1)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMQ8403
    		Fairchild Semiconductor FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH 100V 6A 12-MLP Original PDF 6
    SF Impression Pixel

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    onsemi FDMQ8403

    MOSFETs SER BOOST LED DRVR
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    FAIRCHILD FDMQ8403

    Trans MOSFET N-CH Si 100V 3.1A 12-Pin MLP EP T/R
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    Verical FDMQ8403 30,150 186
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    Fairchild Semiconductor Corporation FDMQ8403

    Trans MOSFET N-CH Si 100V 3.1A 12-Pin WDFN EP T/R
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    Bristol Electronics FDMQ8403 660 1
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    Quest Components FDMQ8403 528
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    FDMQ8403 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDMQ8403 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench MOSFET 100 V, 6 A, 110 mΩ Features General Description This quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge. ̈ Max rDS on = 110 mΩ at VGS = 10 V, ID = 3 A


    Original     		FDMQ8403 PDF

    FDMQ8403

    Abstract: GENERAL SEMICONDUCTOR MARKING s4 41 D1D48 54q4
    Contextual Info: FDMQ8403 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench MOSFET 100 V, 6 A, 110 mΩ Features General Description This quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge. „ Max rDS on = 110 mΩ at VGS = 10 V, ID = 3 A


    Original     		FDMQ8403 FDMQ8403 GENERAL SEMICONDUCTOR MARKING s4 41 D1D48 54q4 PDF

    marking G4

    Abstract: 1B65 FDMQ8403
    Contextual Info: FDMQ8403 N-Channel PowerTrench MOSFET 100 V, 6 A, 110 mΩ Features General Description This quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge. „ Max rDS on = 110 mΩ at VGS = 10 V, ID = 3 A „ Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A


    Original     		FDMQ8403 FDMQ8403 marking G4 1B65 PDF

    rca dual bridge rectifiers

    Contextual Info: FDMQ8403 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench MOSFET 100 V, 6 A, 110 mΩ Features General Description This quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge. „ Max rDS on = 110 mΩ at VGS = 10 V, ID = 3 A


    Original     		FDMQ8403 FDMQ8403 rca dual bridge rectifiers PDF