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    FDME820NZT Search Results

    FDME820NZT Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDME820NZT
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSF N CH 20V 9A MICROFET 1.6 Original PDF 7
    SF Impression Pixel

    FDME820NZT Price and Stock

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    onsemi FDME820NZT

    MOSFET N-CH 20V 9A MICROFET
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    DigiKey () FDME820NZT Digi-Reel 9,062 1
    • 1 $1.15
    • 10 $0.82
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    FDME820NZT Cut Tape 9,062 1
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    FDME820NZT Reel 5,000 5,000
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    Avnet Americas () FDME820NZT Reel 2,500
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    FDME820NZT Reel 25 Weeks 5,000
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    Mouser Electronics FDME820NZT 10,268
    • 1 $1.13
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    Verical () FDME820NZT 116,000 721
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    FDME820NZT 5,689 721
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    FDME820NZT 741 721
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    Newark FDME820NZT Reel 5,000
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    Onlinecomponents.com FDME820NZT
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    Rochester Electronics FDME820NZT 116,000 1
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    TME FDME820NZT 1
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    Richardson RFPD FDME820NZT 5,000
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    Avnet Silica FDME820NZT 26 Weeks 5,000
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    Chip Stock FDME820NZT 33,500
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    EBV Elektronik FDME820NZT 27 Weeks 5,000
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    Flip Electronics FDME820NZT 199,715
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    Rochester Electronics LLC FDME820NZT

    SMALL SIGNAL FIELD-EFFECT TRANSI
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    DigiKey FDME820NZT Bulk 624
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    onsemi FDME820NZT-P

    MOSFET N-CH 20V 9A MICROFET
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    DigiKey FDME820NZT-P Reel
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    Verical FDME820NZT-P 4,916 916
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    Rochester Electronics FDME820NZT-P 4,916 1
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    Flip Electronics FDME820NZT-P 195,517
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    FLIP ELECTRONICS FDME820NZT-P

    MOSFET N-CH 20V 9A MICROFET
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    DigiKey FDME820NZT-P Reel 517
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    onsemi FDME820NZT (POWERTRENCH)

    Mosfet, N-Ch, 20V, 9A, 150Deg C, 2.1W Rohs Compliant: Yes |Onsemi FDME820NZT
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    Newark FDME820NZT (POWERTRENCH) Cut Tape 7,602 1
    • 1 $1.07
    • 10 $0.81
    • 100 $0.54
    • 1000 $0.39
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    FDME820NZT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDME820NZT N-Channel PowerTrench MOSFET 20 V, 9 A, 18 mΩ Features General Description ̈ Max rDS on = 18 mΩ at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET


    Original     		FDME820NZT PDF

    Contextual Info: FDME820NZT N-Channel PowerTrench MOSFET 20 V, 9 A, 18 mΩ Features General Description „ Max rDS on = 18 mΩ at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET


    Original     		FDME820NZT PDF

    Contextual Info: FDME820NZT N-Channel PowerTrench MOSFET 20 V, 9 A, 18 mΩ Features General Description „ Max rDS on = 18 mΩ at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET


    Original     		FDME820NZT FDME820NZT PDF