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    FDME820NZT Search Results

    FDME820NZT Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDME820NZT
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSF N CH 20V 9A MICROFET 1.6 Original PDF 7
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    FDME820NZT Price and Stock

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    onsemi FDME820NZT

    MOSFET N-CH 20V 9A MICROFET
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    DigiKey () FDME820NZT Digi-Reel 8,370 1
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    FDME820NZT Cut Tape 8,370 1
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    FDME820NZT Reel 5,000 5,000
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    Avnet Americas FDME820NZT Reel 22 Weeks 5,000
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    Mouser Electronics FDME820NZT 9,884
    • 1 $1.14
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    Verical () FDME820NZT 111,000 839
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    FDME820NZT 5,689 839
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    FDME820NZT 929 839
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    Newark () FDME820NZT Cut Tape 7,586 1
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    FDME820NZT Reel 5,000
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    Onlinecomponents.com FDME820NZT
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    Rochester Electronics FDME820NZT 111,929 1
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    TME FDME820NZT 1
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    Richardson RFPD FDME820NZT 5,000
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    Avnet Silica FDME820NZT 23 Weeks 5,000
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    Chip Stock FDME820NZT 33,500
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    EBV Elektronik FDME820NZT 24 Weeks 5,000
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    Flip Electronics FDME820NZT 199,715
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    Rochester Electronics LLC FDME820NZT

    SMALL SIGNAL FIELD-EFFECT TRANSI
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    DigiKey FDME820NZT Bulk 604
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    onsemi FDME820NZT-P

    MOSFET N-CH 20V 9A MICROFET
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    Verical FDME820NZT-P 4,916 916
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    Rochester Electronics FDME820NZT-P 4,916 1
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    Flip Electronics FDME820NZT-P 195,517
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    Fairchild Semiconductor Corporation FDME820NZT

    Small Signal Field-Effect Transistor, 9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    Rochester Electronics FDME820NZT 6,430 1
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    Win Source Electronics FDME820NZT 30,000
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    FDME820NZT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDME820NZT N-Channel PowerTrench MOSFET 20 V, 9 A, 18 mΩ Features General Description ̈ Max rDS on = 18 mΩ at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET


    Original     		FDME820NZT PDF

    Contextual Info: FDME820NZT N-Channel PowerTrench MOSFET 20 V, 9 A, 18 mΩ Features General Description „ Max rDS on = 18 mΩ at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET


    Original     		FDME820NZT PDF

    Contextual Info: FDME820NZT N-Channel PowerTrench MOSFET 20 V, 9 A, 18 mΩ Features General Description „ Max rDS on = 18 mΩ at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET


    Original     		FDME820NZT FDME820NZT PDF