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    FDME430NT Search Results

    FDME430NT Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDME430NT
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSF N CH 30V 6A MICROFET1.6 Original PDF 6
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    FDME430NT Price and Stock

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    onsemi FDME430NT

    MOSFET N-CH 30V 6A MICROFET1.6
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    DigiKey FDME430NT Reel
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    Verical () FDME430NT 25,536 1,304
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    FDME430NT 7,610 1,304
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    Rochester Electronics LLC FDME430NT

    MOSFET N-CH 30V 6A MICROFET
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    DigiKey FDME430NT Bulk 865
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    Fairchild Semiconductor Corporation FDME430NT

    Small Signal Field-Effect Transistor, 6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    Rochester Electronics FDME430NT 34,301 1
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    FDME430NT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDME430NT N-Channel PowerTrench MOSFET 30 V, 6 A, 40 mΩ Features General Description „ Max rDS on = 40 mΩ at VGS = 4.5 V, ID = 6 A This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET


    Original     		FDME430NT PDF

    FDME430NT

    Contextual Info: FDME430NT N-Channel PowerTrench MOSFET 30 V, 6 A, 40 mΩ Features General Description „ Max rDS on = 40 mΩ at VGS = 4.5 V, ID = 6 A This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET


    Original     		FDME430NT FDME430NT PDF

    Contextual Info: FDME430NT N-Channel PowerTrench MOSFET 30 V, 6 A, 40 mΩ Features General Description „ Max rDS on = 40 mΩ at VGS = 4.5 V, ID = 6 A This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET


    Original     		FDME430NT FDME430NT PDF