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    FDMC86320 Search Results

    FDMC86320 Datasheets (1)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMC86320
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N CH 80V 10.7A 8-MLP Original PDF 7
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    onsemi FDMC86320

    MOSFET N-CH 80V 10.7A/22A 8MLP
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    Fairchild Semiconductor Corporation FDMC86320

    80 V, 22 A, 11.7 MILLI OHM N-CHANNEL POWER TRENCH MOSFET Power Field-Effect Transistor, 10.7A I(D), 80V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA FDMC86320 715
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    FDMC86320 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description „ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		FDMC86320 PDF

    Contextual Info: FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description „ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		FDMC86320 PDF

    Contextual Info: FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description ̈ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		FDMC86320 PDF

    Contextual Info: FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description „ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		FDMC86320 FDMC86320 PDF