FDMC86320 Search Results
FDMC86320 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FDMC86320 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N CH 80V 10.7A 8-MLP | Original | 7 |
FDMC86320 Price and Stock
onsemi FDMC86320MOSFET N-CH 80V 10.7A/22A 8MLP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMC86320 | Cut Tape | 5,078 | 1 |
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FDMC86320 | Reel | 20 Weeks | 3,000 |
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FDMC86320 | 74 |
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FDMC86320 | 27,000 | 3,000 |
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FDMC86320 | Reel | 3,000 |
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FDMC86320 |
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FDMC86320 | 32,006 | 1 |
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FDMC86320 | 1 |
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FDMC86320 | 3,000 |
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FDMC86320 | 21 Weeks | 3,000 |
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FDMC86320 | 22 Weeks | 3,000 |
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Fairchild Semiconductor Corporation FDMC8632080 V, 22 A, 11.7 MILLI OHM N-CHANNEL POWER TRENCH MOSFET Power Field-Effect Transistor, 10.7A I(D), 80V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMC86320 | 715 |
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Get Quote | |||||||
FDMC86320 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node |
Original |
FDMC86320 | |
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Contextual Info: FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node |
Original |
FDMC86320 | |
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Contextual Info: FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description ̈ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node |
Original |
FDMC86320 | |
|
Contextual Info: FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node |
Original |
FDMC86320 FDMC86320 |