FDMC86320 Search Results
FDMC86320 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FDMC86320 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N CH 80V 10.7A 8-MLP | Original | 7 |
FDMC86320 Price and Stock
onsemi FDMC86320MOSFETs 80V N-Channel PowerTrench MOSFET |
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FDMC86320 | 74 |
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FDMC86320 | 9,000 | 281 |
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| FDMC86320 | 7,921 | 281 |
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| FDMC86320 | 7,272 | 281 |
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| FDMC86320 | 4,813 | 281 |
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FDMC86320 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node |
Original |
FDMC86320 | |
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Contextual Info: FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node |
Original |
FDMC86320 | |
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Contextual Info: FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description ̈ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node |
Original |
FDMC86320 | |
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Contextual Info: FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node |
Original |
FDMC86320 FDMC86320 |