FDMC7660 Search Results

Contextual Info: FDMC7660S N-Channel Power Trench SyncFET 30 V, 20 A, 2.2 mΩ Features General Description „ Max rDS on = 2.2 mΩ at VGS = 10 V, ID = 20 A The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon

Contextual Info: FDMC7660 N-Channel PowerTrench MOSFET 30 V, 20 A, 2.2 mΩ Features General Description ̈ Max rDS on = 2.2 mΩ at VGS = 10 V, ID = 20 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This

FDMC7660S

Contextual Info: FDMC7660S N-Channel Power Trench SyncFET 30 V, 20 A, 2.2 mΩ Features General Description „ Max rDS on = 2.2 mΩ at VGS = 10 V, ID = 20 A The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon

Contextual Info: FDMC7660S N-Channel Power Trench SyncFET 30 V, 20 A, 2.2 mΩ Features General Description ̈ Max rDS on = 2.2 mΩ at VGS = 10 V, ID = 20 A The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon

marking DF FAIRCHILD

Contextual Info: FDMC7660 N-Channel PowerTrench MOSFET 30 V, 20 A, 2.2 mΩ Features General Description „ Max rDS on = 2.2 mΩ at VGS = 10 V, ID = 20 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This

FDMC7660DC

Abstract: PQFN
Contextual Info: PRELIMINARY DATASHEET FDMC7660DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 22 A, 2.2 mΩ Features „ Dual Cool TM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench®

Contextual Info: FDMC7660 N-Channel PowerTrench MOSFET 30 V, 20 A, 2.2 m: Features General Description „ Max rDS on = 2.2 m: at VGS = 10 V, ID = 20 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This

FDMC7660

Contextual Info: FDMC7660 N-Channel PowerTrench MOSFET 30 V, 20 A, 2.2 m: Features General Description „ Max rDS on = 2.2 m: at VGS = 10 V, ID = 20 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This

SIR474

Abstract: grm32er7ya106ka XRP7724
Contextual Info: XRP7720/7724/7725EVB-DEMO-1 Quad Channel Digital PWM/PFM Demo Board Programmable Power Management System January 2014 GENERAL DESCRIPTION The XRP7720/7724/7725EVB-DEMO-1 board is a complete, four channel, power system. It provides 3.3V, 2.5V 1.5V and 1V at a

Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package

Contextual Info: Electrical Specifications Subject to Change LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater

Sanyo supercapacitors

Abstract: maxwell balancing
Contextual Info: LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater Utilization of Stored Energy in Supercapacitors

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

7660D

Abstract: L41B 10-L41B-11 FDMC7660DC
Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package

Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mΩ Features ̈ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package

Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package

Contextual Info: Product Folder Sample & Buy Technical Documents Support & Community Tools & Software TPS659110, TPS659112, TPS659113, TPS659116 SWCS049L – JUNE 2010 – REVISED MARCH 2014 TPS65911x Integrated Power Management Unit Top Specification 1 Features The purpose of the TPS65911 device is to provide