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    FDD18N20LZ Search Results

    FDD18N20LZ Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDD18N20LZ
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V DPAK-3 Original PDF 8
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    FDD18N20LZ Price and Stock

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    onsemi FDD18N20LZ

    MOSFET N-CH 200V 16A DPAK
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    DigiKey FDD18N20LZ Reel 7,500 2,500
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    Avnet Americas FDD18N20LZ Reel 2,500 8 Weeks 2,500
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    Mouser Electronics FDD18N20LZ 57,113
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    Verical () FDD18N20LZ 10,000 2,500
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    FDD18N20LZ 5,000 250
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    FDD18N20LZ 1,260 295
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    Newark () FDD18N20LZ Reel 2,500 2,500
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    FDD18N20LZ Cut Tape 210 1
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    FDD18N20LZ Reel 2,500
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    Future Electronics FDD18N20LZ Bulk 12 Weeks 2,500
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    Onlinecomponents.com FDD18N20LZ 5,000
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    Rochester Electronics FDD18N20LZ 1,260 1
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    TME FDD18N20LZ 2,500
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    IBS Electronics FDD18N20LZ 5,000 2,500
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    Master Electronics FDD18N20LZ 5,000
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    Fairchild Semiconductor Corporation FDD18N20LZ

    FDD18N20LZ by Fairchild is a 200V, 18A N-channel MOSFET with low RDS(on) of 0.1Ω, optimized for high-speed switching applications, featuring a TO-252 package and operating at -55°C to 175°C.
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    IBS Electronics FDD18N20LZ 2,500
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    Win Source Electronics FDD18N20LZ 10,000
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    FDD18N20LZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDD18N20LZ

    Abstract: Forward Reference Diode ic cgs 160v 110 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V
    Contextual Info: UniFET FDD18N20LZ TM N-Channel MOSFET 200V Logic, 16A, 0.125 Features Description • RDS on = 0.125( Max.) @ VGS = 10V, ID = 8A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		FDD18N20LZ FDD18N20LZ Forward Reference Diode ic cgs 160v 110 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V PDF

    Contextual Info: FDD18N20LZ N-Channel UniFETTM MOSFET 200 V, 16 A, 125 mΩ Features Description • R DS on = 125 mΩ (Typ.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDD18N20LZ PDF

    FDD18N20LZ

    Abstract: ic cgs 160v 110
    Contextual Info: FDD18N20LZ N-Channel UniFETTM MOSFET 200 V, 16 A, 125 mΩ Features • R DS on = Description 125 mΩ( Max.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDD18N20LZ FDD18N20LZ ic cgs 160v 110 PDF

    Contextual Info: UniFET FDD18N20LZ TM N-Channel MOSFET 200V Logic, 16A, 0.125 Features • RDS on = 0.125( Max.) @ VGS = 10V, ID = 8A • Low Gate Charge • Low Crss • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant


    Original     		FDD18N20LZ PDF

    E-MOSFET

    Abstract: emosfet R00C
    Contextual Info: INTEGRATED CIRCUITS DIVISION Application Note: AN-202 PRELIMINARY CPC1590 Application Technical Information AN-202-R00C PRELIMINARY 1 INTEGRATED CIRCUITS DIVISION 1 Using the CPC1590 Isolated Gate Driver IC The CPC1590 is an excellent choice for remote switching of DC and low frequency loads where


    Original     		AN-202 CPC1590 AN-202-R00C E-MOSFET emosfet R00C PDF