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    JRH ELECTRONICS 440HJ030NF1303-B

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    DigiKey 440HJ030NF1303-B Bulk 47 1
    • 1 $4064.43
    • 10 $3983.14
    • 100 $3825.41
    • 1000 $3748.90
    • 10000 $3748.90
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    JRH ELECTRONICS 440HJ031NF1303-B

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    DigiKey 440HJ031NF1303-B Bulk 46 1
    • 1 $5248.65
    • 10 $5143.68
    • 100 $4939.99
    • 1000 $4841.19
    • 10000 $4841.19
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    JRH ELECTRONICS 440HJ030NF1303-BT

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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 440HJ030NF1303-BT Bulk 46 1
    • 1 $4812.39
    • 10 $4716.14
    • 100 $4529.38
    • 1000 $4438.80
    • 10000 $4438.80
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    JRH ELECTRONICS 447HS531NF1303B

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    DigiKey 447HS531NF1303B Bulk 20 1
    • 1 $2259.09
    • 10 $2213.91
    • 100 $2126.24
    • 1000 $2083.71
    • 10000 $2083.71
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    Vishay Intertechnologies UMA02040F1303BAU00

    MELF Resistors UMA 0204-10 0.1% AU 130K
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics () UMA02040F1303BAU00
    • 1 $7.05
    • 10 $4.41
    • 100 $3.23
    • 1000 $2.60
    • 10000 $2.51
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    UMA02040F1303BAU00
    • 1 $7.05
    • 10 $4.41
    • 100 $3.23
    • 1000 $2.60
    • 10000 $2.51
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    F1303B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Q631

    Abstract: NOV-97 682 FET
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> F1303B LOW NOISE GaAs F E T DESCRIPTION OUTLINE DRAWING The M G F1303B low-noise GaAs FET with an N-channel 4 M IN . Schottky gate is designed fo r use in S to Ku band ampli­ fiers. The hermetically sealed metal-ceramic


    OCR Scan     		MGF1303B MGF1303B Q631 NOV-97 682 FET PDF

    251C

    Abstract: MGF1303B
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> F1303B LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F1303B low-noise GaAs FET with an N-channel 4 M IN . 1.85 + 0.2 4 M IN . 0 .1 5 7 M IN . (0.0 7 3'± 0 .0 0 8) (0 .1 5 7 M IN .) Schottky gate is designed for use in S to Ku band ampli­


    OCR Scan     		MGF1303B MGF1303B 12GHz 251C PDF

    M5M27C102

    Abstract: M5M27C102P MGF1303B
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1303B LOW NOISE GaAs F E T DESCRIPTION O U TLIN E DRAWING The F1303B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to Ku band ampli­ fiers. The hermetically sealed metal-ceramic package


    OCR Scan     		MGF1303B MGF1303B M5M27C102P RV-15 1048576-BIT 65536-W0RD 16-BIT) T-46-13-25 M5M27C102 PDF

    F-1303

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> i M G F1303Bj I f LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 3 0 3 B low-noise GaAs FET with an N-channel Schottky gate is designed fo r use in S to Ku band am pli­ fiers. The herm etically sealed metal-ceramic


    OCR Scan     		F1303Bj F-1303 PDF

    MGF1303B

    Abstract: ku Band Power GaAs FET
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M F1303B LOW NO ISE GaAs F E T DESCRIPTION OUTLINE DRAWING The M G F1303B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to Ku band ampli­ fiers. The hermetically sealed metal-ceramic 4M IN .


    OCR Scan     		MGF1303B MGF1303B 157MIN. 157ONDUCTOR 12GHz ku Band Power GaAs FET PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1903B TARE CARRIER LOW NOISE GaAs FET D E S C R IP T IO N The MGF1 9 0 3 B is a low noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to Ku band amplifiers. The hermetically sealed metal-ceramic package


    OCR Scan     		MGF1903B MGF1903B F1303B. PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1903B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F 1 9 0 3 B is a lo w noise G aAs FET w ith an N -c h a n n e l S c h o ttky gate, w hich is designed fo r use in S to Ku band Unit: millimeters inches


    OCR Scan     		F1903B F1303B 12GHz PDF

    MGF1903

    Abstract: F-1303 mgf1903b
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1903B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F 1 9 0 3 B is a lo w n o is e G a A s F E T w ith a n N -c h a n n e t S c h o ttk y gate, w h ic h is designed fo r use in S to K u band 4.0 ± 0.2


    OCR Scan     		MGF1903B F1303B 12GHz MGF1903 F-1303 mgf1903b PDF

    MGF1903B

    Abstract: MGF1303B 903b mgf1903
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1903B TAPE CA RR IER LOW NOISE GaAs FET DESCRIPTION The M G F1903B is a low noise GaAs FET w ith an N-channel Schottky gate, which is designed fo r use in S to Ku band amplifiers. The hermetically sealed metal-ceramic package


    OCR Scan     		MGF1903B MGF1303B. MGF1903B 12GHz MGF1303B 903b mgf1903 PDF