ENN699 Search Results

Contextual Info: Ordering number : ENN6995 2SJ608 P-Channel Silicon MOSFET 2SJ608 Ultrahigh Speed Switching Applications Features • • • • Low ON-resistance. Ultrahigh speed switching. Low-voltage drive. Mounting height 9.5mm. Meets radial taping. unit : mm 2085A [2SJ608]

2SC5778

Contextual Info: Ordering number : ENN6992 2SC5778 NPN Triple Diffused Planar Silicon Transistor 2SC5778 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2174A [2SC5778] 5.6 3.4 16.0 3.1 0.8 21.0

Contextual Info: Ordering number: ENN6994 | NPN Triple Diffused Planar Silicon Transistor 2SC5792 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed. ♦High breakdown voltage VcB0 = 1 600V . * High reliability^Adoption of HVP process).

2SC5777

Abstract: TA-3323
Contextual Info: Ordering number : ENN6991 2SC5777 NPN Triple Diffused Planar Silicon Transistor 2SC5777 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V . High reliability (Adoption of HVP process).

CPH3307

Abstract: sanyo 3076
Contextual Info: Ordering number : ENN6996 CPH3307 P-Channel Silicon MOSFET CPH3307 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2152A [CPH3307] 2.9 0.15 0.4 0.6 3 0.2 • 2 1

Contextual Info: Ordering num ber: ENN6990 NPN Triple Diffused Planar Silicon Transistor 2SC5776 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • . Package Dimensions H igh speed. H igh breakdown voltage V C B O -1 6 0 0 V .

2SC5776

Abstract: TA-3322
Contextual Info: Ordering number : ENN6990 2SC5776 NPN Triple Diffused Planar Silicon Transistor 2SC5776 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V . High reliability (Adoption of HVP process).

L0235

Contextual Info: Ordering num ber: ENN6992 NPN Triple Diffused Planar Silicon Transistor 2SC5778 ISA/iYOi Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • H igh speed. • H igh breakdown voltage VCBO=]6(X V). ■ H igh reliability(A doption o f H V P process).

2SC5778

Abstract: 52003 ta-3321
Contextual Info: Ordering number : ENN6992A 2SC5778 NPN Triple Diffused Planar Silicon Transistor 2SC5778 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2174A [2SC5778] 5.6 3.4 16.0 3.1 0.8 21.0

ic63a

Abstract: 2SC5791
Contextual Info: Ordering number : ENN6993A 2SC5791 NPN Triple Diffused Planar Silicon Transistor 2SC5791 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1600V .

2SC5776

Contextual Info: Ordering number : ENN6990A 2SC5776 NPN Triple Diffused Planar Silicon Transistor 2SC5776 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V . High reliability (Adoption of HVP process).

Contextual Info: Ordering number: ENN6998 N-Channel Silicon MOSFET CPH3408 ISA/iYOi Ultrahigh-Speed Switching Applications Features Package Dimensions • Low O N -state resistance. ■ U ltrahigh-spced sw itching. ■ 4V drive. unit : mm 2152A [CPH3408] 0.15 i^Q.4 to Ö 3H

Contextual Info: Ordering number: ENN6993 | NPN Triple Diffused Planar Silicon Transistor 2SC5791 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions H igh speed. H igh breakdown voltage V CB O =3600V . High reliabilily(A doption o f H V P process)

Contextual Info: I Ordering number : ENN6996~j P-Channel Silicon MOSFET CPH3307 ISAf/YOi Ultrahigh-Speed Switching Applications Features Package Dimensions • Low O N -re si stance. • U ltrahigh-spced sw itching. • 2.5V drive. unit : mm 2152A [CPH3307] 2.9 I f 90 nr“*

2SJ608

Contextual Info: Ordering number: ENN6995 P-Channel Silicon MOSFET 2SJ608 Isa M yo i Ultrahigh Speed Switching Applications Features Package Dimensions • L ow O N -re sista n e e . unit : m m • U ltrah ig h sp eed sw itc h in g . 2085A • L o w -v o lta g e drive. • M o u n tin g h eig h t 9 .5 m m .

2sc5792

Contextual Info: Ordering number : ENN6994 2SC5792 NPN Triple Diffused Planar Silicon Transistor 2SC5792 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).

2SJ608

Abstract: TA-2989
Contextual Info: Ordering number : ENN6995 2SJ608 P-Channel Silicon MOSFET 2SJ608 Ultrahigh Speed Switching Applications Features • • • • Low ON-resistance. Ultrahigh speed switching. Low-voltage drive. Mounting height 9.5mm. Meets radial taping. unit : mm 2085A [2SJ608]

2SC5777

Contextual Info: Ordering number : ENN6991A 2SC5777 NPN Triple Diffused Planar Silicon Transistor 2SC5777 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V . High reliability (Adoption of HVP process).

2SC5792

Contextual Info: Ordering number : ENN6994A 2SC5792 NPN Triple Diffused Planar Silicon Transistor 2SC5792 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1600V .

CPH3407

Contextual Info: Ordering number : ENN6997 CPH3407 N-Channel Silicon MOSFET CPH3407 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2152A [CPH3407] 2.9 0.15 0.4 0.6 3 0.2 • 2 1

Contextual Info: Ordering number : ENN699Ï | NPN Triple Diffused Planar Silicon Transistor _ 2SC5777 ISA/lYOl Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • • Package Dimensions High speed.

Contextual Info: Ordering number : ENN6997 ] N-Channel Silicon MOSFET CPH3407 IS A /iY O i Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. • Ultrahigh-speed switching. . 2.5V drive. unit : mm 2152 A [CPH3407] 2.9 ^ 0 .4 ^ 0. 15.

2SC5791

Abstract: TO-3PMLH
Contextual Info: Ordering number : ENN6993 2SC5791 NPN Triple Diffused Planar Silicon Transistor 2SC5791 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).

CPH3408

Abstract: TA-3079
Contextual Info: Ordering number : ENN6998 CPH3408 N-Channel Silicon MOSFET CPH3408 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-state resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2152A [CPH3408] 2.9 0.15 0.4 0.6 3 0.2 •