DSC2G03 Search Results
DSC2G03 Price and Stock
Panasonic Electronic Components DSC2G0300LDSC2G0300L NPN BIPOLAR TRANSISTOR, 0.05 A, 20 V, 3-PIN MINI3 G3 B |
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DSC2G0300L | Bulk | 20 |
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DSC2G0300L | 2,191 |
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| DSC2G0300L | 2,191 |
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Panasonic Industry DSC2G0300LTrans RF BJT NPN 20V 0.05A 200mW 3-Pin Mini3-G3-B T/R |
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DSC2G0300L | 2,739 | 1 |
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DSC2G03 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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DSC5G03
Abstract: DSC2G03
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2002/95/ecdsc5g03dsc2g03 | |
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Contextual Info: DSC2G03 Silicon NPN epitaxial planar type Unit: mm For high-frequency amplification • Features High transition frequency fT Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: C6 Packaging DSC2G03x0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) |
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dsc2g03ul-94 | |
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Contextual Info: DSC5G03 Silicon NPN epitaxial planar type For high-frequency amplification DSC2G03 in SMini3 type package Unit: mm • Features High transition frequency fT Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: C6 |
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dsc5g03dsc2g03ul-94 | |
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Contextual Info: DMS935E1 Silicon NPN epitaxial planar type Tr Silicon epitaxial planar type (CCD load device) For CCD output circuits DSC2G03 + CCD load device (Individual) Unit: mm • Features Two elements incorporated into one package (Tr + CCD load device) High transition frequency fT |
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dms935e1dsc2g03ul-94dms935e10r | |
DSC2G03Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC2G03 Silicon NPN epitaxial planar type For high-frequency amplification • Features Package High forward current transfer ratio hFE with excellent linearity High transition frequency fT |
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2002/95/ecdsc2g03 | |
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Contextual Info: DMS935E2 Silicon NPN epitaxial planar type Tr Silicon epitaxial planar type (CCD load device) For CCD output circuits DSC2G03 + CCD load device (Individual) Unit: mm • Features Two elements incorporated into one package (Tr + CCD load device) High transition frequency fT |
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dms935e2dsc2g03ul-94dms935e20r | |
ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
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respons39o-220d-a1ma26p02maz3082j+15 | |
DMS935E1
Abstract: DSC2G03 marking ccd panasonic device marking examples
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2002/95/ecdms935e1dsc2g03marking ccd+1 | |
DMC904F1
Abstract: DSC2001 DSC2G03
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2002/95/ecdmc904f1dsc2g03dsc2001 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DMS935E1 Silicon NPN epitaxial planar type (Tr) Silicon epitaxial planar type (CCD load device) For CCD output circuits • Features Package Two elements incorporated into one package (Tr + CCD load device) |
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2002/95/ecdms935e1dsc2g03dms935e10r | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DMC904F1 Silicon NPN epitaxial planar type For high frequency amplification • Features Package High forward current transfer ratio hFE with excellent linearity High transition frequency fT |
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2002/95/ecdmc904f1dsc2g03dsc2001+1 | |
MN864779
Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
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a000021emn864779mn88472an12947a+7 | |
DMS935E2
Abstract: DSC2G03
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2002/95/ecdms935e2dsc2g03 | |
dms935e2Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DMS935E2 Silicon NPN epitaxial planar type (Tr) Silicon epitaxial planar type (CCD load device) For CCD output circuits • Features Package Two elements incorporated into one package (Tr + CCD load device) |
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2002/95/ecdms935e2dsc2g03dms935e20r | |
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DMS935E1Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DMS935E1 Silicon NPN epitaxial planar type (Tr) Silicon epitaxial planar type (CCD load device) For CCD output circuits • Features Package High transition frequency fT Contributes to miniaturization of sets, reduction of component count. |
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2002/95/ecdms935e1dsc2g03 | |