DS541 Search Results

Contextual Info: Defense Grade Platform Flash In-System Programmable Configuration PROM DS541 v2.1 June 25, 2014 Product Specification Features • In-System Programmable PROM for Configuration of Xilinx FPGAs • I/O Pins Compatible with Voltage Levels Ranging From 1.8V to 3.3V

RD33FG

Abstract: RD33FG01 RD33FG02 RD33FG03 RD33FG04 RD33FG05 RD33FG06
Contextual Info: RD33FG RD33FG Rectifier Diode Target Information Replaces November 2000, version DS5415-1.1 DS5415-2.0 October 2001 FEATURES KEY PARAMETERS • Optimised For High Current Rectifiers VRRM ■ High Surge Capability IF AV (max) 3997A ■ Very Low On-state Voltage

diagram pin modulator uhf

Abstract: PCS1900M MGCT03 MGCT04 QSOP28 uhf duplexer 26VOL
Contextual Info: MGCT03 Transmit Circuit for TDMA/AMPS Features • • • • • DS5418 The MGCT03 circuit is designed for use in dual band, dual mode cellular 900MHz/PCS1900MHz mobile phones. It can be used for TDMA/AMPS. The MGCT03 is compatible with baseband and mixed

MH89793

Abstract: MT8979 MT9079
Contextual Info: MH89793 E1 Line Interface Unit LIU with Selectable Impedance Preliminary Information Features DS5419 ISSUE 2 June 1996 Ordering Information • • • • • • • • Complete primary rate 2048kbit/s E1 line driver and receiver with clock recovery Meets ETSI requirements [ETSI ETS 300 011,

Contextual Info: RD33FG RD33FG Rectifier Diode Target Information Replaces November 2000, version DS5415-1.1 DS5415-2.0 October 2001 FEATURES KEY PARAMETERS • Optimised For High Current Rectifiers VRRM ■ High Surge Capability IF AV (max) 3997A ■ Very Low On-state Voltage

Contextual Info: RD43FF RD43FF Rectifier Diode Target Information Replaces November 2000, version DS5414-1.1 DS5414-2.0 October 2001 FEATURES KEY PARAMETERS • Optimised For High Current Rectifiers VRRM ■ High Surge Capability IF AV (max) 4466A ■ Very Low On-state Voltage

xqf32p

Abstract: XQF32PVO48M XQF32PV048 XQF32PV XQF32PV0 XQ32P nor flash VO48 XCF08 XC4VFX60
Contextual Info: < B L B R DS541 v1.0 November 27, 2006 QPro Extended Temperature Platform Flash In-System Programmable Configuration PROM Product Specification Features • In-System Programmable PROM for Configuration of Xilinx FPGAs • I/O Pins Compatible with Voltage Levels Ranging From

uhf duplexer

Abstract: VCO 1ghz RF-19 UHF band RF modulator MGCT03 MGCT04 QSOP28 1GHz Oscillator
Contextual Info: MGCT03 Transmit Circuit for TDMA/AMPS Features • • • • • DS5418 The MGCT03 circuit is designed for use in dual band, dual mode cellular 900MHz/PCS1900MHz mobile phones. It can be used for TDMA/AMPS. The MGCT03 is compatible with baseband and mixed

MH89793

Abstract: MT8979 MT9079
Contextual Info: MH89793 E1 Line Interface Unit LIU with Selectable Impedance Preliminary Information Features DS5419 ISSUE 2 June 1996 Ordering Information • • • • • • • • Complete primary rate 2048kbit/s E1 line driver and receiver with clock recovery Meets ETSI requirements [ETSI ETS 300 011,

MH89793

Abstract: MT8979 MT9079 zarlink PDIP
Contextual Info: MH89793 E1 Line Interface Unit LIU with Selectable Impedance Preliminary Information Features DS5419 ISSUE 2 June 1996 Ordering Information • • • • • • • • Complete primary rate 2048kbit/s E1 line driver and receiver with clock recovery Meets ETSI requirements [ETSI ETS 300 011,

723 ic internal diagram

Abstract: GP1201FSS18 AN4502 AN4503 AN4505 AN4506
Contextual Info: GP1201FSS18 GP1201FSS18 Single Switch Low VCE SAT IGBT Module DS5411-1.1 January 2001 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200A Per Module KEY PARAMETERS VCES (typ)

Contextual Info: MH89793 E1 Line Interface Unit LIU with Selectable Impedance Preliminary Information Features DS5419 ISSUE 2 June 1996 Ordering Information • • • • • • • • Complete primary rate 2048kbit/s E1 line driver and receiver with clock recovery Meets ETSI requirements [ETSI ETS 300 011,

MGCT03

Abstract: MGCT04 QSOP28 15N 50 Power One Power Network Interface
Contextual Info: MGCT03 Transmit Circuit for TDMA/AMPS Features • • • • • DS5418 The MGCT03 circuit is designed for use in dual band, dual mode cellular 900MHz/PCS1900MHz mobile phones. It can be used for TDMA/AMPS. The MGCT03 is compatible with baseband and mixed

VCO 1ghz

Abstract: UHF band RF modulator MGCT03 MGCT04 QSOP28 uhf amplifier design Transistor filter 900MHz noise figure rf900
Contextual Info: MGCT03 Transmit Circuit for TDMA/AMPS Features • • • • • DS5418 The MGCT03 circuit is designed for use in dual band, dual mode cellular 900MHz/PCS1900MHz mobile phones. It can be used for TDMA/AMPS. The MGCT03 is compatible with baseband and mixed

RD43FF

Abstract: RD43FF01 RD43FF02 RD43FF03 RD43FF04 RD43FF05 RD43FF06 4466A 4066A
Contextual Info: RD43FF RD43FF Rectifier Diode Target Information Replaces November 2000, version DS5414-1.1 DS5414-2.0 October 2001 FEATURES KEY PARAMETERS • Optimised For High Current Rectifiers VRRM ■ High Surge Capability IF AV (max) 4466A ■ Very Low On-state Voltage

MH89793

Abstract: MT8979 MT9079 EW 90
Contextual Info: MH89793 E1 Line Interface Unit LIU with Selectable Impedance Preliminary Information Features DS5419 ISSUE 2 June 1996 Ordering Information • • • • • • • • Complete primary rate 2048kbit/s E1 line driver and receiver with clock recovery Meets ETSI requirements [ETSI ETS 300 011,

RD43FF

Abstract: RD43FF01 RD43FF02 RD43FF03 RD43FF04 RD43FF05 RD43FF06 3 phase rectifier diode 51500a
Contextual Info: RD43FF RD43FF Rectifier Diode Target Information Replaces November 2000, version DS5414-1.1 DS5414-2.0 October 2001 FEATURES KEY PARAMETERS • Optimised For High Current Rectifiers VRRM ■ High Surge Capability IF AV (max) 4466A ■ Very Low On-state Voltage

AN4839

Abstract: RD33FG RD33FG01 RD33FG02 RD33FG03 RD33FG04 RD33FG05 RD33FG06
Contextual Info: RD33FG RD33FG Rectifier Diode Target Information Replaces November 2000, version DS5415-1.1 DS5415-2.0 October 2001 FEATURES KEY PARAMETERS • Optimised For High Current Rectifiers VRRM ■ High Surge Capability IF AV (max) 3997A ■ Very Low On-state Voltage

AN4839

Abstract: RD43FF RD43FF01 RD43FF02 RD43FF03 RD43FF04 RD43FF05 RD43FF06 4466A 4066A
Contextual Info: RD43FF RD43FF Rectifier Diode Target Information Replaces November 2000, version DS5414-1.1 DS5414-2.0 October 2001 FEATURES KEY PARAMETERS • Optimised For High Current Rectifiers VRRM ■ High Surge Capability IF AV (max) 4466A ■ Very Low On-state Voltage

phase shift oscillator

Abstract: 1GHz PLL Generator low noise vhf amp uhf vhf amplifier 2Ghz agc amplifier if uhf modulator datasheet SSB Modulator application note UHF band RF modulator vhf vco low voltage MGCT03
Contextual Info: MGCT03 Transmit Circuit for TDMA/AMPS Features • • • • • DS5418 The MGCT03 circuit is designed for use in dual band, dual mode cellular 900MHz/PCS1900MHz mobile phones. It can be used for TDMA/AMPS. The MGCT03 is compatible with baseband and mixed

MGCT03

Abstract: MGCT04 QSOP28 vhf vco low voltage uhf rf pll modulator SSB Modulator application note
Contextual Info: MGCT03 Transmit Circuit for TDMA/AMPS Features • • • • • DS5418 The MGCT03 circuit is designed for use in dual band, dual mode cellular 900MHz/PCS1900MHz mobile phones. It can be used for TDMA/AMPS. The MGCT03 is compatible with baseband and mixed

AN4503

Abstract: AN4502 AN4505 AN4506 GP1200FSM18 AN5000
Contextual Info: GP1200FSM18 GP1200FSM18 Hi-Reliability Single Switch IGBT Module DS5410-1.2 January 2001 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 1200A Per Module KEY PARAMETERS VCES typ VCE(sat)

Zarlink Pin Compatible

Contextual Info: MH89793 E1 Line Interface Unit LIU with Selectable Impedance Preliminary Information Features DS5419 ISSUE 2 June 1996 Ordering Information • • • • • • • • Complete primary rate 2048kbit/s E1 line driver and receiver with clock recovery Meets ETSI requirements [ETSI ETS 300 011,

RD33FG

Abstract: RD33FG01 RD33FG02 RD33FG03 RD33FG04 RD33FG05 RD33FG06
Contextual Info: RD33FG RD33FG Rectifier Diode Target Information Replaces November 2000, version DS5415-1.1 DS5415-2.0 October 2001 FEATURES KEY PARAMETERS • Optimised For High Current Rectifiers VRRM ■ High Surge Capability IF AV (max) 3997A ■ Very Low On-state Voltage