DS3508 Search Results

Contextual Info: Rev 1; 3/08 I2C, 8-Channel Gamma Buffer with EEPROM The DS3508 is a programmable 8-channel gamma voltage generator with one byte of on-chip EEPROM and one byte of SRAM memory per channel. Each channel is composed of an independent 8-bit DAC with an associated EEPROM/SRAM pair. At power-up, nonvolatile

Contextual Info: Rev 0; 1/08 I2C, 8-Channel Gamma Buffer with EEPROM The DS3508 is a programmable 8-channel gamma voltage generator with one byte of on-chip EEPROM and one byte of SRAM memory per channel. Each channel is composed of an independent 8-bit DAC with an associated EEPROM/SRAM pair. At power-up, nonvolatile

DAC 8bit I2C 20pin

Abstract: DS3508 11101001 RL253 RL254 RL255 10 channel gamma DS35
Contextual Info: Rev 1; 3/08 I2C, 8-Channel Gamma Buffer with EEPROM The DS3508 is a programmable 8-channel gamma voltage generator with one byte of on-chip EEPROM and one byte of SRAM memory per channel. Each channel is composed of an independent 8-bit DAC with an associated EEPROM/SRAM pair. At power-up, nonvolatile

Contextual Info: DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Device V BR DSS Q1 30V Q2 -30V Features and Benefits RDS(ON) max ID max TC = +25°C • 0.6mm Profile – Ideal for Low Profile Applications • PCB Footprint of 4mm 21mΩ @ VGS = 10V

DFN3020B-8

Abstract: 2.7A SOT23-6
Contextual Info: A Product Line of Diodes Incorporated ZXMC3AMC 30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID max Device RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) Q1 120mΩ @ VGS = 10V 3.7A 180mΩ @ VGS = 4.5V

DMC3021

Abstract: C3021L 6a10dc DMC3021LK4
Contextual Info: DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Device V BR DSS Q1 30V Q2 -30V Features and Benefits RDS(ON) max ID max TA = 25°C 21mΩ @ VGS = 10V 9.4A 32mΩ @ VGS = 4.5V 7.3A 39mΩ @ VGS = -10V -6.8A 53mΩ @ VGS = -4.5V

Contextual Info: DFLF1800 Green 1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER PowerDI 123 Product Summary @TA = +25°C Features and Benefits VRRM (V) IO (A) VFMAX (V) IRMAX ( A) • 800 1 1.35 10 • Fast Recovery Time For High Efficiency • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

Contextual Info: DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET N EW PRODU CT Product Summary Device V BR DSS Q1 30V Q2 -30V Features and Benefits • • • • • • ID max TC = 25°C RDS(ON) max 21mΩ @ VGS = 10V 14A 32mΩ @ VGS = 4.5V 14A 39mΩ @ VGS = -10V

Contextual Info: A Product Line of Diodes Incorporated ZXMC3AMC 30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • • • • • ID max Device RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) Q1 120mΩ @ VGS = 10V 3.7A 180mΩ @ VGS = 4.5V

d4515

Abstract: LED highlight
Contextual Info: 5.0 mm DIA LED LAMP REV:A / 0 520PG2C-F2 PACKAGE DIMENSIONS ITEM MATERIALS RESIN Epoxy Resin LEAD FRAME Sn Plating iron Alloy Note: 1.All Dimensions are in millimeters. 2.Tolerance is ±0.25mm 0.010 " Unless otherwise specified. 3.Protruded resin under flange

max14574

Abstract: MAX1786 MAX1788 MAX8899 DS1849 MAX16908 MAX4967 DS3610 max17018 max13487
Contextual Info: Monitor Reports by Product: 1. Find the product of interest in the table below. Note the process and/or package for that product. 2. Use the "Back" button to return to the home page. 3. Select the process in the "Process Reliability" for the product of interest.

DFN3020B-8

Abstract: Marking G2 SOT23-6
Contextual Info: A Product Line of Diodes Incorporated ZXMN3AMC 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID max RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) 120mΩ @ VGS = 10V 3.7A 180mΩ @ VGS = 4.5V

Contextual Info: A Product Line of Diodes Incorporated ZXMN3AMC 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • • • • • ID max RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) 120mΩ @ VGS = 10V 3.7A 180mΩ @ VGS = 4.5V

Contextual Info: DFLF1800 1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER PowerDI 123 Features Mechanical Data • • • • • • • • Ideally Suited for Automated Assembly Fast Recovery Time For High Efficiency Lead Free Finish, RoHS Compliant Note 1 “Green” Molding Compound (No Br, Sb)

DFN3020B-8

Abstract: DNA MARKING CODE
Contextual Info: A Product Line of Diodes Incorporated ZXMN2AMC 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID max RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) 120mΩ @ VGS= 4.5V 3.7A 300mΩ @ VGS= 2.5V

DFLF1800

Contextual Info: DFLF1800 1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER PowerDI 123 Features Mechanical Data • • • • • • • • Ideally Suited for Automated Assembly Fast Recovery Time For High Efficiency Lead Free Finish, RoHS Compliant Note 1 “Green” Molding Compound (No Br, Sb)

35-16A

Contextual Info: DS 35 DSA 35 DIXYS Rectifier Diodes Avalanche Diodes DSI 35 DSAI35 vRRRM RM = 800 -1800 v iF RMS = 80 a I' f (AV)M = 49 A V RSM V 900 1300 1300 1700 1900 ^ (B R)m in V V RRM •X Anode V I ^ on stud •J- on stud - 800 1200 DS35-08A DS35-12A DSI 35-08A

DMC3021

Abstract: DMC3021LK4
Contextual Info: DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Device V BR DSS Q1 30V Q2 Features and Benefits RDS(ON) max ID max TA = 25°C 21mΩ @ VGS = 10V 9.4A 32mΩ @ VGS = 4.5V 7.3A 39mΩ @ VGS = -10V -6.8A 53mΩ @ VGS = -4.5V

30V vgs

Contextual Info: DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Device V BR DSS Q1 30V Q2 -30V Features and Benefits RDS(ON) max ID max TA = 25°C 21mΩ @ VGS = 10V 9.4A 32mΩ @ VGS = 4.5V 7.3A 39mΩ @ VGS = -10V -6.8A 53mΩ @ VGS = -4.5V

DAC 8bit I2C 20pin

Abstract: DS3508 RL253 RL254 RL255
Contextual Info: Rev 1; 3/08 I2C, 8-Channel Gamma Buffer with EEPROM Features ♦ 8-Bit Gamma DACs, 8 Channels ♦ 1 Byte EEPROM and 1 Byte SRAM per Channel ♦ Ultra-Low Power 2mA IDD, typ ♦ 400kbps I2C Interface ♦ 9.0V to 15.5V Analog Supply ♦ 2.7V to 5.5V Digital Supply

Contextual Info: A Product Line of Diodes Incorporated ZXMN2AMC 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • • • • • ID max RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) 120mΩ @ VGS= 4.5V 3.7A 300mΩ @ VGS= 2.5V

Contextual Info: 5.0 mm DIA LED LAMP REV:A / 1 520CG6C-f2 PACKAGE DIMENSIONS ITEM MATERIALS RESIN Epoxy Resin LEAD FRAME Sn Plating iron Alloy Note: 1.All Dimensions are in millimeters. 2.Tolerance is ±0.25mm 0.010 " Unless otherwise specified. 3.Protruded resin under flange