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    DMN2014LHAB Search Results

    DMN2014LHAB Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    DMN2014LHAB-13
    Diodes MOSFET BVDSS: 8V~24V U-DFN2030-6 Original PDF 454.14KB 6
    DMN2014LHAB-7
    Diodes Incorporated FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 9A 6-UDFN Original PDF 6
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    DMN2014LHAB Price and Stock

    Diodes Incorporated

    Diodes Incorporated DMN2014LHAB-13

    MOSFET 2N-CH 20V 9A 6UDFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () DMN2014LHAB-13 Digi-Reel 9,940 1
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    DMN2014LHAB-13 Cut Tape 9,940 1
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    DMN2014LHAB-13 Reel 10,000
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    Avnet Americas DMN2014LHAB-13 Reel 24 Weeks 10,000
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    Mouser Electronics DMN2014LHAB-13
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    Newark DMN2014LHAB-13 Cut Tape 9,950 5
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    TME DMN2014LHAB-13 10,000 10,000
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    Avnet Silica DMN2014LHAB-13 10,000 26 Weeks 10,000
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    New Advantage Corporation DMN2014LHAB-13 40,000 1
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    Diodes Incorporated DMN2014LHAB-7

    MOSFET 2N-CH 20V 9A 6UDFN
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    DigiKey () DMN2014LHAB-7 Digi-Reel 3,006 1
    • 1 $0.80
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    DMN2014LHAB-7 Cut Tape 3,006 1
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    DMN2014LHAB-7 Reel 3,000 3,000
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    Avnet Americas DMN2014LHAB-7 Reel 12 Weeks 3,000
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    Mouser Electronics DMN2014LHAB-7 3,224
    • 1 $0.80
    • 10 $0.51
    • 100 $0.33
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    TME DMN2014LHAB-7 1
    • 1 $0.76
    • 10 $0.48
    • 100 $0.31
    • 1000 $0.21
    • 10000 $0.20
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    Avnet Silica DMN2014LHAB-7 3,000 14 Weeks 3,000
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    Chip Stock DMN2014LHAB-7 11,100
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    New Advantage Corporation DMN2014LHAB-7 15,000 1
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    DMN2014LHAB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: DMN2014LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(on) max 20V 13mΩ @ VGS = 4.5V 14mΩ @ VGS = 4.0V 17mΩ @ VGS = 3.1V 18mΩ @ VGS = 2.5V 28mΩ @ VGS = 1.8V ID TA = +25°C 9.0A 8.7A 8.0A 6.7A 6.3A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching


    Original
    DMN2014LHAB DS36441 PDF

    Contextual Info: DMN2014LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(on) max 20V 13mΩ @ VGS = 4.5V 14mΩ @ VGS = 4.0V 17mΩ @ VGS = 3.1V 18mΩ @ VGS = 2.5V 28mΩ @ VGS = 1.8V ID TA = +25°C 9.0A 8.7A 8.0A 6.7A 6.3A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original
    DMN2014LHAB AEC-Q101 DS36441 PDF

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original
    2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 PDF