DD31S4 Search Results

BTAJ6

Abstract: si268 ha5105
Contextual Info: 30E » H 7^5^ 237 DD31S4Ô 1 • ^ Z S ~ \S V 7 S G S -T H O M S O N k7 # M œ m iO T T IH M D ! S G S-THOMSON B TA 16 B W SNUBBERLESS TRIACS ■ Itrms = 16 A at Tc = 80 °C. ■ Vdrm : 200 V to 800 V. ■ ■ ■ ■ Iq t = 50 mA Ql-ll-lll . GLASS PASSIVATED CHIP.

Contextual Info: KM29N16000ERS ELECTRONICS Fl ash 2 M x 8 B i t NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C ~ +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit

BTA 16

Abstract: BTA 112
Contextual Info: 30E D • 7 ^ 5 ^ 5 37 0031540 7 ■ " P E S - iS S C S -T H O M S O N BTA 16 AW S G S-THOMSON SNUBBERLESS TRIACS ■ ■ ■ ■ ■ ■ Itrms = 16 A at To = 80 °C. Vdrm : 200 V to 800 V. Igt = 75 mA Ql-ll-lll . GLASS PASSIVATED CHIP. HIGH SURGE CURRENT : Itsm = 150 A.

BTA16B 600B

Contextual Info: 7^237 30E D • 0 0 3 15MM M ■ _ T ' Z S - 1 5 " £ ÿ j S G S - T h Ho Om M s S oO nN B T A 16 B ILdCTGM DtgS S G S-THOMSON TRIACS ■ GLASS PASSIVATED CHIP ■ EXCELLENT dv/dt c > 10 V/ns ■ Ig t SPECIFIED IN FOUR QUADRANTS ■ INSULATING VOLTAGE 2 5 0 0 V r m s