DB3 Search Results

Contextual Info: CY54FCT244T, CY74FCT244T 8-BIT BUFFERS/LINE DRIVERS WITH 3-STATE OUTPUTS SCCS071 – OCTOBER 2001 D D D D D D D D OEA DA0 OB0 DA1 OB1 DA2 OB2 DA3 OB3 GND 1 20 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 VCC OEB OA0 DB0 OA1 DB1 OA2 DB2 OA3 DB3 CY54FCT244T . . . L PACKAGE

DB3X501K

Abstract: db3x DB2J501
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3X501K Silicon epitaxial planar type For high speed switching DB2J501 in Mini3 type package • Features  Package  Packaging  Code Mini3-G3-B  Pin Name 1: Anode 2: N.C. 3: Cathode

DB2S31

Abstract: db3x
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3X316J Silicon epitaxial planar type For small current rectification • Features  Package  Short reverse recovery time trr  Low forward voltage VF  Contributes to miniaturization of sets, reduction of component count.

DB2J314

Abstract: DB3X314 DB2J31400L
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB2J314 Silicon epitaxial planar type For high speed switching circuits DB3X314K in SMini2 type package • Features  Package  Short reverse recovery time trr  Small reverse current IR

DB3J316

Contextual Info: DB3J316K Silicon epitaxial planar type Unit: mm For small current rectification DB3X316K in SMini3 type package • Features  Short reverse recovery time trr  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant

Contextual Info: DB3X407K Silicon epitaxial planar type Unit: mm For high frequency rectification • Features  Short reverse recovery time trr  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 3J

Contextual Info: DB3S308F Silicon epitaxial planar type For high speed switching circuits Unit: mm • Features  Short reverse recovery time trr  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 4T

Contextual Info: DB3X313F Silicon epitaxial planar type For small current rectification Unit: mm • Features  Low forward voltage VF and small reverse current IR  Low terminal capacitance Ct  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant

Contextual Info: Doc No. TT4-EA-12479 Revision. 2 Product Standards Schottky Barrier Diode DB3S406F0L DB3S406F0L Silicon epitaxial planar type Unit: mm For high speed switching circuits 1.6 0.26 „ Features 0.13 3 0.85 1.6 y Small reverse current IR y Short reverse recovery time trr

db3j208

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3J208K Silicon epitaxial planar type For high speed switching circuits DB2J208 in SMini3 type package • Features  Package  Low forward voltage VF  Contributes to miniaturization of sets, reduction of component count.

DB3X315E

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3X315E Silicon epitaxial planar type For high speed switching circuits • Features  Package  Short reverse recovery time trr  Small reverse current IR  Contributes to miniaturization of sets, reduction of component count.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3X316K Silicon epitaxial planar type For small current rectification • Features  Package  Short reverse recovery time trr  Low forward voltage VF  Contributes to miniaturization of sets, reduction of component count.

DB3S315E0L

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3S315E Silicon epitaxial planar type For high speed switching circuits DB3J315E in SSMini3 type package • Features  Package  Short reverse recovery time trr  Small reverse current IR

Contextual Info: DB3X315E Silicon epitaxial planar type For high speed switching circuits Unit: mm • Features  Short reverse recovery time trr  Small reverse current IR  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 5D

Contextual Info: DB3X313N Silicon epitaxial planar type For small current rectification Unit: mm • Features  Low forward voltage VF and small reverse current IR  Low terminal capacitance Ct  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant

Contextual Info: DB3-DB3TG 350mW Bi-directional Trigger Diodes Features • • • • • • • • • • VBO : 32V Version Low break-over current DO-35 package JEDEC Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3X209K Silicon epitaxial planar type For high frequency rectification • Features  Package  Short reverse recovery time trr  Low forward voltage VF  Contributes to miniaturization of sets, reduction of component count.

SIDAC K1V 32

Abstract: ax06 sidac violet k1v diode DO41 package k1v8 K1V11 db3 diac SIDAC k1v5 A405
Contextual Info: SEMICONDUCTORS DIODES, Trigger DIAC DO41 DO41 mod DO35 min. nom. 28 32 Breakover Voltage Symmetry Breakover Current dV between 0 and 10mA dV max. V IBO max. (µA) min. (V) DB3 ±3 100 5 DB3A ±3 100 5 DO41 DB3AS ±3 100 5 DO41 mod / A405 Device No. & Order Code

UC1698U

Abstract: UC1698 DMG16
Contextual Info: 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 -8 3 .8 — -7 7 .5 — -7 3 .8 — 66 . 8 -6 0 .0 -5 4 .3 8 - D in ooo N n in in m "d" CO 52 w m9 ^ ^ m in ° t to c>j «o 160X160 DOTS LO vss C/D /WR /RD /CS /RST VDD DB0 DB1 DB2 DB3 DB4 DB5 DB6 DB7 K NC A B

Contextual Info: RS Part Ref: 500-0869 RSPart Ref: 500-0853 RSPart Ref: 500-0875 DB3000A — 1 A b o v e D e s k U ni t The DB3000A ADU range has been designed to satisfy the growing requirement for desktop connectivity, typically for “Hot Desking" environments. e £ CD

Contextual Info: DB3X316K Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DB3X316K Product type: Schottky Barrier Diode Parameters *DEVICE=DB3X316K,D * DB3X316K D model *$ .MODEL DB3X316K D + IS=477.23E-9 + N=1.0 + RS=1.6470 + IKF=1.9141 + CJO=8.4129E-12

DIACS

Abstract: universal motor speed control
Contextual Info: DB3, DB4, DB6 SILICON BIDIRECTIONAL DIACS POWER DISSIPATION 2 DO-2 ~ J FEATURES 150 mW VSS L • Three way layer, two terminal, axial lead, hermetically sealed diacs are designed specifically H*I.y v.! n )8: for triggering thyrisitors. They demonstrate low

Contextual Info: 1/16 duty, 1 /5 bias G - 1 G 1. O chsCLT’C L c te T 's X D IM E N S IO N A L 2 L 'ir b e s D R A W IN G 8 5 .0 + 0.3 PIN NO. SYMBOL 2 .0 BLO CK 1 2 V dd Vss 3 4 5 6 7 8 9 10 11 12 13 14 Vo RS R/W E DBO DB1 DB2 DB3 DB4 DB5 DB6 DB7 D IA G R A M V ss •

Contextual Info: CD I ru MO CD oJ CO ui Terminal CN1 No. Pin Name 1 DB3 2 DB2 3 FLM 4 M 5 CL1 6 CL2 7 DB1 8 DBO 9 VDD 10 v s s 11 VO 12 FG 13 E L I 14 EL2 98.0 96,1 3-3.05 2-4.0 6,25 9,50 |\ co 2-90,0 77.5C VA CD 4-07,6 CU) 71,OKA,A,) Z- 0.03 0.34 0.37 O b_ Pixels Detail: