CYU01M16ZFC Search Results
CYU01M16ZFC Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| CYU01M16ZFC |
|
16-Mbit (1M x 16) Pseudo Static RAM | Original | 427.72KB | 14 | ||
| CYU01M16ZFCU-55BVXI |
|
IC SRAM CHIP ASYNC SINGLE 1.8V 16MBIT 1MX16 55NS 48VFBGA | Original | 219.96KB | 14 | ||
| CYU01M16ZFCU-70BVXI |
|
IC SRAM CHIP ASYNC SINGLE 1.8V 16MBIT 1MX16 70NS 48VFBGA | Original | 219.96KB | 14 |
CYU01M16ZFC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: CYU01M16ZFC MoBL3 PRELIMINARY 16-Mbit 1M x 16 Pseudo Static RAM Features • Wide voltage range: 1.7V–1.95V • Access Time: 70 ns • Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18 mA @ f = fmax (For 70 ns |
Original |
CYU01M16ZFC 16-Mbit 16-word 48-ball I/O15) | |
CYU01M16ZFCContextual Info: CYU01M16ZFC MoBL3 PRELIMINARY 16-Mbit 1M x 16 Pseudo Static RAM Features • Wide voltage range: 1.7V–1.95V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical active current: TBD @ f = 1 MHz Writing to the device is accomplished by taking Chip Enable |
Original |
CYU01M16ZFC 16-Mbit I/O15) 16-word CYU01M16ZFC | |
|
Contextual Info: CYU01M16ZFC MoBL3 PRELIMINARY 16-Mbit 1M x 16 Pseudo Static RAM Features • Wide voltage range: 1.7V–1.95V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical active current: TBD @ f = 1 MHz Writing to the device is accomplished by taking Chip Enable |
Original |
CYU01M16ZFC 16-Mbit 16-word 48-ball I/O15) | |
CYU01M16ZFCContextual Info: CYU01M16ZFC MoBL3 PRELIMINARY 16-Mbit 1M x 16 Pseudo Static RAM Features • Wide voltage range: 1.7V–1.95V • Access Time: 70 ns • Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18 mA @ f = fmax • Ultra low standby power |
Original |
CYU01M16ZFC 16-Mbit 16-word 48-ball CYU01M16ZFC |