CNB1009 Search Results

Reflective photosensor response time

Abstract: high sensitivity reflective phototransistor CNB1009
Contextual Info: Reflective Photosensors Photo Reflectors CNB1009 Reflective Photosensor Overview Unit : mm (1.0) 7.4±0.2 1.0 1.0 19.0±0.3 2-9.5±0.2 ø2.2 Applications Detection of paper, film and cloth Optical mark reading Detection of position and edge (15.5) (2.54)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Reflective Photosensors (Photo Reflectors) CNB1009 (ON2173) Reflective Photosensor For contactless SW and object detection • Overview M Di ain sc te on na tin nc ue e/ d CNB1009 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as

CNB1009

Abstract: ON2173
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Reflective Photosensors (Photo Reflectors) CNB1009 (ON2173) Reflective Photosensor For contactless SW and object detection • Overview CNB1009 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as

CNB1009

Abstract: ON2173
Contextual Info: Reflective Photosensors Photo Reflectors CNB1009 (ON2173) Reflective Photosensor Overview Unit : mm (1.0) 7.4±0.2 1.0 1.0 19.0±0.3 2-9.5±0.2 Applications Detection of paper, film and cloth Optical mark reading (15.5) (2.54) 2.5 min. Small size, light weight

Contextual Info: Reflective Photosensors Photo Reflectors CNB1009 (ON2173) Reflective photosensor Non-contact point SW, object sensing Unit: mm 4.0±0.2 (1.0) 19.0±0.3 2-9.5±0.2 1.0 7.4±0.2 1.0 φ2.2±0.2 9.5±0.3 • Fast response: tr , tf = 6 µs (typ.) • Small size, light weight

CNB1009

Abstract: ON2173
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Reflective Photosensors (Photo Reflectors) CNB1009 (ON2173) Reflective Photosensor For contactless SW and object detection • Overview  Features  Fast response: tr , tf = 6.0 s (typ.)

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ON1501

Abstract: LN29RCPX LNG242RDA ON1120 CNZ1215 LN21RPH-TA ON1024 ON3131 LN39GCPX on1128
Contextual Info: -y 7‘LED Surface Mounting Chip LED GW Bi-Color Type Type No. Lighting Color LN2162C68— TR ÎÊ *\fÎi^5 È Î§ Pure Green Orange Absolute Maximum Ratings (Ta=25"C) L ig h tin g C o lo r PD (m W ) 1 F( m A ) l FP( m A ) * V r (V) T o p r ( iC ) P u re G re e n

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ON1120

Abstract: ON1112 59 ON2179 CNZ1120 VISIBLE LIGHT PHOTOdarlington TRANSISTOR ON3171 ON1387 ON1113 reflective photocoupler CNA1006N
Contextual Info: Characteristics List • Photocoupler ■ Hologram Unit 17 Photocoupler ■ Photointerrupter Absolute Maximum Ratings Electro • Optical Characteristics Ta = 25°C Part No. IF mA VCEO (V) IF (mA) CNA1006N IC min. (mA) ICEO max. (µA) t r , tf typ. (µs)