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    CM50DU-24F Search Results

    CM50DU-24F Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CM50DU-24F
    		Mitsubishi IGBT Module Original PDF 52KB 4
    CM50DU-24F
    		Powerex Trench Gate Design Dual IGBTMOD 50 Amperes/1200 Volts Original PDF 105.47KB 4
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    CM50DU-24F Price and Stock

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    Powerex Power Semiconductors CM50DU-24F

    IGBT MOD 1200V 50A 320W MOD
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    DigiKey CM50DU-24F Bulk 10
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    Mitsubishi Electric CM50DU-24F

    Igbt Module, 1.2Kv, 50A; Continuous Collector Current:50A; Collector Emitter Saturation Voltage:2.4V; Power Dissipation:320W; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Mitsubishi Electric CM50DU-24F
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    Newark CM50DU-24F Bulk 10
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    Mitsubishi Electric CM50DU24F

    HIGH POWER SWITCHING USE IGBT MODULE Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
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    ComSIT USA CM50DU24F 2,986
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