CJQ4435 Search Results
CJQ4435 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
CJQ4435
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JCET Group | P-Channel Power MOSFET CJQ4435 with -30V Drain-Source Voltage, -9.1A Continuous Drain Current, and low RDS(on) of 24mΩ at -10V VGS, suitable for battery and load switch applications in compact SOP8 package. | Original | ||||
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CJQ4435S
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JCET Group | P-Channel Power MOSFET in SOP8 package with -30V Drain-Source Voltage, -7.3A continuous drain current, 18mΩ typical RDS(on) at -10V VGS, featuring trench technology for low gate resistance and optimized performance in battery and load switch applications. | Original |
CJQ4435 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435 P-Channel MOSFET SOP8 APPLICATIONS Load Switches Battery Switch Maximum ratings Ta=25℃ unless otherwise noted Parameter Symbol Value Drain-Source Voltage |
Original |
CJQ4435 -250uA |